Patents Assigned to Advanced LCD Technologies Dev.Ctr. Co., Ltd.
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INSULATING FILM FORMING METHOD, INSULATING FILM FORMING APPARATUS, AND PLASMA FILM FORMING APPARATUS
Publication number: 20100239782Abstract: An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.Type: ApplicationFiled: June 2, 2010Publication date: September 23, 2010Applicant: Advanced LCD Technologies Dev. Ctr., Co., LtdInventors: Atsushi SASAKI, Kazufumi Azuma, Tetsuya Ide, Yukihiko Nakata -
Publication number: 20100214641Abstract: The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.Type: ApplicationFiled: May 4, 2010Publication date: August 26, 2010Applicant: Advanced LCD Technologies Dev.Ctr. Co., LtdInventors: Yukio Taniguchi, Masakiyo Matsumura, Noritaka Akita
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Publication number: 20090284839Abstract: An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.Type: ApplicationFiled: July 24, 2009Publication date: November 19, 2009Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Takashi Ono, Kazufumi Azuma, Masakiyo Matsumura
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Publication number: 20090223941Abstract: An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.Type: ApplicationFiled: May 20, 2009Publication date: September 10, 2009Applicant: Advanced LCD Technologies Dev.Ctr. Co., Ltd.Inventor: Masayuki JYUMONJI
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Publication number: 20090194769Abstract: A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.Type: ApplicationFiled: April 13, 2009Publication date: August 6, 2009Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Masato Hiramatsu, Hiroyuki Ogawa, Masakiyo Matsumura
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Publication number: 20090038536Abstract: A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.Type: ApplicationFiled: October 1, 2008Publication date: February 12, 2009Applicant: Advanced LCD Technologies Dev. Ctr. Co., Ltd.Inventors: Yukio Taniguchi, Masayuki Jyumonji, Hiroyuki Ogawa
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Publication number: 20080032244Abstract: A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value a (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2?value ??0.8.Type: ApplicationFiled: October 3, 2007Publication date: February 7, 2008Applicant: Advanced LCD Technologies Dev. Ctr. Co., Ltd.Inventors: Yukio TANIGUCHI, Masakiyo Matsumura
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Publication number: 20080019002Abstract: A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.Type: ApplicationFiled: September 26, 2007Publication date: January 24, 2008Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Yukio TANIGUCHI, Masakiyo Matsumura, Hirotaka Yamaguchi, Mikihiko Nishitani, Susumu Tsujikawa, Yoshinobu Kimura, Masayuki Jyumonji
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Publication number: 20070096103Abstract: The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.Type: ApplicationFiled: December 19, 2006Publication date: May 3, 2007Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Masayuki Jyumonji, Masakiyo Matsumura, Yoshinobu Kimura, Mikihiko Nishitani, Masato Hiramatsu, Yukio Taniguchi, Fumiki Nakano, Hiroyuki Ogawa
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Publication number: 20060284175Abstract: A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.Type: ApplicationFiled: August 25, 2006Publication date: December 21, 2006Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Masato Hiramatsu, Yoshinobu Kimura, Hiroyuki Ogawa, Masayuki Jyumonji, Masakiyo Matsumura
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Publication number: 20060124971Abstract: A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.Type: ApplicationFiled: January 20, 2006Publication date: June 15, 2006Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Masato Hiramatsu, Yoshinobu Kimura, Hiroyuki Ogawa, Masayuki Jyumonji, Yoshitaka Yamamoto, Masakiyo Matsumura
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Publication number: 20060033104Abstract: There is disclosed a thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film whose crystals have grown in a transverse direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region, wherein a channel-region-side edge portion of the drain region or the source region is disposed in such a manner as to be positioned in the vicinity of an end position of lateral growth.Type: ApplicationFiled: August 5, 2005Publication date: February 16, 2006Applicant: Advanced LCD Technologies Dev. Ctr. Co., Ltd.Inventors: Yoshiaki Nakazaki, Fumiki Nakano, Genshiro Kawachi, Terunori Warabisako, Masayuki Jyumonji, Hiroyuki Ogawa, Masato Hiramatsu, Tomoya Kato
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Publication number: 20050145845Abstract: The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.Type: ApplicationFiled: January 25, 2005Publication date: July 7, 2005Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Masayuki Jyumonji, Masakiyo Matsumura, Yoshinobu Kimura, Mikihiko Nishitani, Masato Hiramatsu, Yukio Taniguchi, Fumiki Nakano, Hiroyuki Ogawa