Abstract: A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) implanting the substrate with an ion compound represented by the symbol E1.sub.x Ed.sub.y, where E1 represents an element having high solubility in the substrate material with minimal detrimental chemical or electrical effects and can be the same element as the substrate element, Ed (dopant element) represents an element which is an electron acceptor or donor having high solubility limit in the substrate material, and x and y indicate the number of respective E1 and Ed atoms in the ion compound.