Patents Assigned to Advanced Micro Devices, Ins.
  • Nitrogen-plasma treatment for reduced nickel silicide bridging
    Patent number: 6465349
    Abstract: Bridging between nickel silicide layers on a gate electrode and source/drain regions along silicon nitride sidewall spacers is prevented by treating the exposed surfaces of the silicon nitride sidewall spacers with a nitrogen plasma to create a surface region having reduced free silicon. Embodiments include treating the silicon nitride sidewall spacers with a nitrogen plasma to reduce the refractive index of the surface region to less than about 1.95.
    Type: Grant
    Filed: October 5, 2000
    Date of Patent: October 15, 2002
    Assignee: Advanced Micro Devices, Ins.
    Inventors: Minh Van Ngo, Christy Mei-Chu Woo, Paul R. Besser, Robert A. Huertas