Patents Assigned to Advanced Micro Devies, Inc.
  • Method of reducing erosion of a metal cap layer during via patterning in semiconductor devices
    Patent number: 8338293
    Abstract: During the patterning of via openings in sophisticated metallization systems of semiconductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: December 25, 2012
    Assignee: Advanced Micro Devies, Inc.
    Inventors: Christin Bartsch, Daniel Fischer, Matthias Schaller