Abstract: A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.
Type:
Grant
Filed:
November 20, 2006
Date of Patent:
February 9, 2010
Assignee:
Advanced Micro-Fabrication Equipment, Inc. Asia
Inventors:
AiHua Chen, Shulin Wang, Henry Ho, Gerald Yin, Qing Lv, Li Fu
Abstract: The invention includes multi-station workpiece processors, methods of processing semiconductor workpieces within multi-station workpiece processors, and methods of moving semiconductor workpieces within multi-station workpiece processors. In one implementation, a multi-station workpiece processor includes a processing chamber comprising multiple stations for processing individual workpieces. A pedestal is associated with individual of the stations. The pedestals are mounted for selective vertical up movement within the chamber to contact a workpiece and for selective vertical down movement within the chamber to be displaced from a workpiece. The pedestals respectively comprise an upper surface upon which an individual workpiece is received during processing within the chamber. At least one workpiece engagement arm is associated with individual of the pedestals.
Type:
Grant
Filed:
February 9, 2006
Date of Patent:
April 14, 2009
Assignee:
Advanced Micro-Fabrication Equipment, Inc. Asia
Abstract: An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.
Type:
Grant
Filed:
April 25, 2007
Date of Patent:
March 17, 2009
Assignee:
Advanced Micro-Fabrication Equipment, Inc. Asia
Abstract: An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.
Type:
Application
Filed:
April 25, 2007
Publication date:
October 16, 2008
Applicant:
ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA,
Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.
Type:
Application
Filed:
July 2, 2007
Publication date:
January 17, 2008
Applicant:
Advanced Micro-Fabrication Equipment, Inc. Asia