Patents Assigned to ADVANCED MICRO FOUNDRY PTE. LTD.
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Publication number: 20250113650Abstract: The present disclosure relates generally to a single photon avalanche diode (SPAD) having a rib waveguide with a doping profile having a multiplication junction, a top cladding layer disposed on a top surface of the rib waveguide, a bottom cladding layer disposed on a bottom surface of the rib waveguide. The SPAD has an anode, a cathode and two field plates. The anode, cathode and the two field plates are configured to suppress the electric field over the multiplication junction relative to a SPAD without the at least two field plates, and the two field plates and/or cathode are positioned adjacent to the intersection of the multiplication junction and the top cladding layer.Type: ApplicationFiled: March 1, 2022Publication date: April 3, 2025Applicant: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Yanikgonul SALIH, Xianshu LUO
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Publication number: 20250085480Abstract: An integrated cavity-enhanced photodetector for visible photonics is provided. The photodetector includes a waveguide, an absorption layer, a set of metal contacts and a phase shifter. The photodetector can be used for visible photonics with multi-material integration flow and low loss.Type: ApplicationFiled: March 1, 2022Publication date: March 13, 2025Applicant: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Yanikgonul SALIH, Xianshu LUO
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Publication number: 20250013083Abstract: A III-V/Si hybrid MOS optical modulator with a traveling-wave electrode for high-efficiency and high-bandwidth optical modulation is disclosed. The III-V/Si hybrid MOS optical modulator equipped with a traveling-wave electrode becomes a traveling-wave modulator. The traveling-wave modulator comprises a III-V compound semiconductor layer, a silicon layer and an oxide layer between the III-V compound semiconductor layer and the silicon layer. The traveling-wave modulator comprises of at least one first metallic layer, at least one second metallic layer and a semiconductor layer. The electrode trace width of each second metallic layer and the spacing between adjacent second metallic layers are adjusted to achieve the impedance and velocity matching. A traveling-wave electrode is designed to integrate with the III-V/Si hybrid MOS optical modulator under forward and reverse bias.Type: ApplicationFiled: November 11, 2021Publication date: January 9, 2025Applicant: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Qiang LI, Xianshu LUO
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Patent number: 12051885Abstract: A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material, different from the first material, wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; and wherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser.Type: GrantFiled: December 26, 2019Date of Patent: July 30, 2024Assignee: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Feng Gao, Lianxi Jia, Guo Qiang Patrick Lo
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Patent number: 11994757Abstract: A hybrid photonic chip comprising a plurality of semiconductor materials arranged to define a chip providing a function, wherein at least a first part of the chip is formed of materials which can be fabricated using a CMOS technique; and at least a second part of the chip which comprises non-linear crystal material and is not subjected to etching process; wherein the second part of the chip in conjunction with the first part is configured to support a propagating low loss single mode.Type: GrantFiled: April 24, 2020Date of Patent: May 28, 2024Assignee: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Patrick Guo Qiang Lo, Shawn Yohanes Siew, Larry Lian Xi Jia
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Patent number: 11960118Abstract: The present invention relates of a photonic integrated and a method of fabricating a photonic integrated chip, PIC, configured for alignment and attachment of a laser diode in a predetermined position in which light from the laser diode is aligned with an input of the PIC; wherein the photonic chip comprises an asymmetric alignment assembly for receiving and aligning the laser diode in the predetermined position; and wherein the input comprises a coupler for receiving a laser beam from the laser diode in use.Type: GrantFiled: May 27, 2020Date of Patent: April 16, 2024Assignee: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Chao Li, Patrick Guo-Qiang Lo
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Patent number: 11662519Abstract: A tunable element for an optical waveguide device, such as an Optical Phased Array (OPA), is described. Tunable element comprises three waveguide sections arranged such that light propagates through the first waveguide section, then through the second waveguide section and then through the third waveguide section, with light being either evanescently or directly coupled from one waveguide section to the next. The tunable element further comprises one or more resistive heating pad formed proximate to the second waveguide section. The first and third waveguide sections are formed from a first material and the second waveguide section is formed from a second, different material and the second material is more thermo-optically sensitive than the first material.Type: GrantFiled: October 18, 2019Date of Patent: May 30, 2023Assignee: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Xianshu Luo, Guo-Qiang Lo
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Patent number: 11320717Abstract: Various embodiments may provide an optical phase array. The optical phase array may include a laser source configured to emit a laser. The optical phase array may further include an integrated photonic network with n stages of optical splitters, the optical splitters being 1 ? 2 optical splitters, each optical splitter of the integrated photonic network having an input, a first output, and a second output. The integrated photonic network may be configured to separate the laser into N outputs. Each output of the N outputs may differ from a neighbouring output of the N outputs by a constant phase difference (??). N may be equal to 2 to the power of n.Type: GrantFiled: September 18, 2017Date of Patent: May 3, 2022Assignee: ADVANCED MICRO FOUNDRY PTE. LTD.Inventors: Shiyang Zhu, Edward Sing Chee Koh, Patrick Guo-Qiang Lo