Patents Assigned to Advanced Micro Services
  • Semiconductor device having silicide layers formed using a collimated metal layer
    Patent number: 6255215
    Abstract: A process for forming a silicide layer using a metal layer formed by collimated deposition is provided. The collimated metal layer may, for example, be formed by sputtering metal particles and filtering the metal particles prior to forming the metal layer. By depositing metal in this manner, the resistance of the resultant metal silicide layer can be reduced as compared to metal silicide layers formed using conventional techniques. Lower silicidation reaction temperatures may also be employed.
    Type: Grant
    Filed: October 20, 1998
    Date of Patent: July 3, 2001
    Assignee: Advanced Micro Services
    Inventors: Fred Hause, Charles E. May, William S. Brennan