Patents Assigned to Advanced Nanoscale Devices
  • FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR
    Publication number: 20220199631
    Abstract: Non-volatile memory devices utilizing polarizable ferroelectric-semiconductor materials as the floating gate in floating-gate field-effect metal oxide transistors are described. Such materials can be annealed at temperatures less than 450° C., and fields below about 250 kV/cm can be used for changing polarization of the ferroelectric semiconductor materials, leading to devices capable of high endurance (>1010 cycles).
    Type: Application
    Filed: December 21, 2021
    Publication date: June 23, 2022
    Applicant: Advanced Nanoscale Devices
    Inventors: Carlos A. Paz de Araujo, Jolanta B. Celinska, Christopher R. McWilliams, Jason E. Nobles