Patents Assigned to Advanced Optoelectric Technology, Inc.
  • Patent number: 9166117
    Abstract: An exemplary light emitting device includes a blue-green light source and a orange-red light source. The blue-green light source emits blue-green light and the orange-red light source emits orange-red light when they are activated. The blue-green light and the orange-red light are mixed together to obtain white light.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: October 20, 2015
    Assignee: ADVANCED OPTOELECTRIC TECHNOLOGY, INC.
    Inventors: Chung-Min Chang, Chien-Lin Chang-Chien, Hsuen-Feng Hu, Chang-Wen Sun, Ya-Ting Wu
  • Patent number: 8552462
    Abstract: An LED package includes an electrode, an LED chip, and an insulation layer. The electrode includes a first electrode and a second electrode. The first electrode and the second electrode are separate from each other. The LED chips are connected to the first and second electrodes. The insulation layer covers the first and second electrodes and the LED chip. A cavity is defined in the first electrode for receiving the LED chip therein. A channel is defined between the first electrode and the second electrode. The channel communicates with the cavity and the insulation layer fills in the cavity and the channel.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: October 8, 2013
    Assignee: Advanced Optoelectric Technology, Inc.
    Inventors: Hou-Te Lin, Ming-Ta Tsai
  • Patent number: 8324648
    Abstract: A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: December 4, 2012
    Assignee: Advanced Optoelectric Technology, Inc.
    Inventor: Ko-Wei Chien
  • Patent number: 8318514
    Abstract: The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: November 27, 2012
    Assignee: Advanced Optoelectric Technology, Inc.
    Inventors: Shiun-Wei Chan, Chih-Hsun Ke
  • Patent number: 8067782
    Abstract: An exemplary LED package includes a dielectric plate, a heat conductor, a first planar electrode and a second planar electrode, a LED chip, and metal wires. The dielectric plate comprises a receiving groove defined therein. The heat conductor is positioned in the dielectric plate opposite to the receiving groove, and the heat conductor comprises a holding portion exposed on bottom of the receiving groove. The first and second planar electrodes are respectively received in the dielectric plate extending to the receiving groove and are spaced from the heat conductor. The first and second electrodes are respectively electrically connected to the LED chip by the metal wires. The LED chip is mounted on the holding portion of the heat conductor.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: November 29, 2011
    Assignee: Advanced Optoelectric Technology, Inc.
    Inventors: Chung-Min Chang, Chih-Peng Hsu, Chun-Wei Wang
  • Patent number: 7994628
    Abstract: A package structure for photoelectronic devices comprises a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and a second surface, wherein the first surface is opposed to the second surface. The first surface has a reflective opening, and the second surface has at least two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recesses. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the surface of the second insulating layer. The second conductive layer is disposed on the surface of the second surface and inside the electrode via holes.
    Type: Grant
    Filed: October 21, 2008
    Date of Patent: August 9, 2011
    Assignee: Advanced Optoelectric Technology, Inc.
    Inventors: Wen Liang Tseng, Lung Hsin Chen, Jian Shihn Tsang
  • Patent number: D640212
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: June 21, 2011
    Assignee: Advanced Optoelectric Technology, Inc.
    Inventors: Chih-Yung Lin, Min-Tsun Hsieh, Ching-Lien Yeh, Chi-Wei Liao, Lung-Hsin Chen, Wen-Liang Tseng