Abstract: A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

Abstract: A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.

Abstract: A light emitting diode (LED) package includes a substrate, a first electrode, a second electrode, an LED die mounted on the substrate and electrically connected to the first and the second electrodes, and an encapsulation layer encapsulating the LED die. Both the first and the second electrodes are embedded in the substrate and spaced from each other. Each of the first and the second electrodes includes a top face and a bottom face, with the top face and the bottom face thereof being exposed at a top surface and a bottom surface of the substrate, respectively. The top face of the first electrode defines a first groove therein. An oxidation-resistant metal coating layer is filled in the first groove. A positive bonding pad of the LED die directly contacts with a top face of the first oxidation-resistant metal coating layer.

Abstract: A method for packaging an LED includes steps: providing a substrate with a circuit structure formed thereon, stacking the substrate on a supporting board, and arranging a plurality of LED dies on the substrate; providing a mold and a gelatinous-state fluorescent film, positioning the supporting board in the mold and covering the mold with the gelatinous-state fluorescent film to cooperatively define a receiving space among the fluorescent film, the mold and the supporting board, the substrate and the LED dies being received in the receiving space; exhausting air in the receiving space to attach the gelatinous-state fluorescent film on the LED dies; solidifying the gelatinous-state fluorescent film and removing the mold; forming an encapsulation on the substrate to cover the LED dies; cutting the substrate and removing the supporting board to obtain several individual LED packages.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.

Abstract: A backlight module includes a back cover, a light source located on the back cover, an optical fiber located on the back cover and over the light source and having a light-incident hole facing the light source and a plurality of light-emergent windows opposite to the light-incident hole. A plurality of light shutters correspondingly covers the light-emergent windows. A controlling device is provided for controlling the open and close of the light shutters. Light emitted from the light source and entering the optical fiber is permitted to leave the optical fiber from the light-emergent windows whose light shutters are opened. The light is not permitted to leave the optical fiber from the light-emergent windows whose light shutters are closed.

Abstract: An LED die comprises a substrate and an epitaxial layer formed thereon. The epitaxial layer comprises a first n-type semiconductor layer, an active layer and a p-type semiconductor layer grown on the substrate in sequence. The LED die defines a receiving recess formed in a center of a top face of the p-type semiconductor layer. The receiving recess extends through the p-type semiconductor layer, the active layer and into the n-type semiconductor layer along a top-to-bottom direction of the epitaxial layer. A pair of p-pads are located at two opposite sides of the p-type semiconductor layer, respectively. A first n-pad is received in the receiving recess and located on the n-type layer.

Abstract: An LED package includes a first electrode, a second electrode, a reflecting cup connecting the first electrode and the second electrode, and an LED chip. The first electrode includes a first main portion and a first connecting portion extending outwardly from the first main portion. The first connecting portion has a first connecting face away from the first main portion. The second electrode includes a second main portion and a second connecting portion extending outwardly from the second main portion. The second connecting portion has a second connecting face away from the second main portion. The first main portion and the second main portion are embedded into the receiving cup, and the first connecting face of the first connecting portion and the second connecting face of the second connecting portion are exposed outside the receiving cup.

Abstract: A light emitting diode (LED) package includes a substrate with a flat top surface, an LED chip mounted on the substrate, and a group of blocking structure and encapsulation body. The LED chip electrically connects with the substrate. The blocking structure surrounds the LED chip. The encapsulation body covers the LED chip. A bottom of the encapsulation body is enclosed by the blocking structure; the encapsulation body has a light outputting surface, and an outer surface of the blocking structure is continuously connected with the light outputting surface. The light outputting surface has a semispherical profile. An angle between a normal line extending from the outer surface of the blocking structure and perpendicular to the substrate and a tangent line tangent to the light outputting surface at a point thereof adjacent to the outer surface is smaller than 60 degrees.

Abstract: An LED includes a base, a pair of leads fixed on the base, a housing fixed on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity in a central area thereof and a chamber adjacent to a circumferential periphery thereof. Top faces of the leads are exposed in the chamber. A blocking wall is formed in the chamber to contact the exposed top faces of the leads. A bonding force between the blocking wall and the leads is larger than that between the leads and the housing.

Abstract: A light emitting diode assembly includes a base, a light emitting chip mounted on the base, an elastic lens covering the light emitting chip, two rotation members rotatably arranged on the base, and two stopper poles fixed on the base. The two rotation members are capable of driving the elastic lens to rotate with respect to the two stopper poles. The stopper poles compress the elastic lens to cause the elastic lens to deform resiliently when the elastic lens is rotated by the rotation members to engage with the stopper poles.

Abstract: A light emitting diode (LED) bulb includes a connecting body, a mounting base located on the connecting body and a plurality of LED modules mounted on the mounting base. The mounting base has a top face spaced from the connecting body and at least three surrounding walls. The top face of the mounting base orients toward a direction different that of each of the at least three surrounding walls. A lamp cover is secured to the connecting body and encloses the LED modules. An extension of the top face of the mounting base interests with the lamp cover at a point. A tangent line of the lamp cover through the point and the extension of the top face form an included angle which is less than 60 degrees. Furthermore, a center of the lamp cover is located above the top face.

Abstract: An LED bulb includes a connecting member having an Edison male screw base and an LED module engaging with the connecting member. The LED module includes a circuit board, a first LED and a plurality of second LEDs mounted on the circuit board. The first LED is arranged on a center of the circuit board. The second LEDs are located surround the first LED. The LED bulb furthermore includes a plurality of lens. Each lens covers a corresponding second LED. Each lens includes a light-guiding portion which includes a light input surface and a light output surface. Light emitted from each of the second LEDs travels into the lens via the light input surface, and is refracted out to lateral directions of the LED bulb by the light output surface of the light-guiding portion to obtain a wider illumination range.

Abstract: A method for manufacturing an LED (light emitting diode) with bat-wing emitting field lens is disclosed. Firstly, a substrate is provided. The substrate includes a plurality of depressions each corresponding to a pair of electrodes. A plurality of LED chips are fastened in the depressions and electrically connected to the pairs of electrodes. A plurality of unsolidified lenses are formed in the depressions to cover the LED chips. A pressing mold including a plurality of protrusions is provided. The pressing mold is moved towards the substrate to force the protrusions of the pressing mold to insert into the unsolidified lenses. The lenses are solidified and the pressing mold is removed and concavities are defined at the lenses. The substrate is cut to obtain a plurality of separated and finished LEDs.

Abstract: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 ?m to 2.5 ?m.

Abstract: A method for manufacturing an LED (light emitting diode) is disclosed wherein a metal substrate is provided. A chip fastening area with a depression and two wire fixing areas on the first metal substrate are defined on the metal substrate. The chip fastening area and the wire fixing areas are separated by a plurality of first grooves. An LED chip is provided in the depression of the chip fastening area and electrically connected to the wire fixing areas by wires. An encapsulant is formed to cover and connect the chip fastening area and the wire fixing areas. Portions of the metal substrate except the chip fastening area and the wire fixing areas are removed.

Abstract: A method for making a light emitting module includes: a. providing a flexible substrate; b. forming a plurality of rigid portions in the flexible substrate; c. forming an electrically conductive layer on the rigid portions, the electrically conductive layer having several electrodes apart from each other; d. arranging a plurality of LED dies on the electrically conductive layer with each LED die striding over and electrically connected to two neighboring electrodes; e. forming an encapsulating layer to cover the LED dies; and f. cutting through the flexible substrate. At least one of above steps b, c, d, e is performed by a roll applying process.

Abstract: An LED manufacturing method includes following steps: providing an LED die; providing an electrode layer having a first section and a second section electrically insulated from the first section, and arranging the LED die on the second section wherein an electrically conductive material electrical connects a bottom of the LED die with second section; forming a transparent conductive layer to electrically connect a top of the LED die with the first section; providing a base and coating an outer surface of the base with a layer of electrically conductive material, defining a continuous gap in the electrically conductive material to divide the electrically conductive material into a first electrode part, and a second electrode part, arranging the electrode layer on the base so that the first section contacts the first electrode part, and the second section contacts the second electrode part.

Abstract: An LED (light emitting diode) lighting apparatus includes an LED, a light adjusting device and a shell. The LED includes a main lighting surface and a heat dissipating surface. The shell receives the LED and the light adjusting device therein, the shell having a light emitting window for light emitted from the LED to transmit therethrough after the light is directed by the light adjusting device. The heat dissipating surface of the LED connects the light emitting window, and heat generated by the LED is transferred from the heat dissipating surface to the light emitting window to prevent snow from accumulating on the light emitting window.