Abstract: An LED die includes a base, and an N-typed semiconductor layer, an active layer and a P-typed semiconductor layer formed on the base that order. The LED die also includes an N-electrode and a P-electrode. The N-electrode is arranged on the N-typed semiconductor layer and electrically connected therewith. The P-electrode is arranged on the P-typed semiconductor layer and electrically connected therewith. The LED die further includes a barrier layer arranged between the P-typed semiconductor layer and the P-electrode. The barrier layer includes at least two materials of Cr, Ni and Ti. The at least two materials of Cr, Ni and Ti are stacked together to form the barrier layer.

Abstract: A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color.

Abstract: An LED device includes a substrate having a top surface and a bottom surface. The substrate defines a through hole at a center thereof. The LED device also includes an electrode board. The electrode board defines a concave portion at a center thereof, and a convex portion connected to and surrounding two sides of the concave portion. The concave portion includes a first electrode and a second electrode isolated from each other, and is located in the through hole of the substrate. A bottommost surface of the concave portion is substantially coplanar with the bottom surface of the substrate, and a top surface of the convex portion is substantially coplanar with the top surface of the substrate. An LED chip is arranged on the concave portion, and is electrically connected to the first electrode and the second electrode. A method for manufacturing plural such LED devices is also provided.

Abstract: An LED light source device includes an LED light source, a first translucent structure covering the LED light source and a second translucent structure covering the first translucent structure. An interior of the first translucent structure has light scattering powder distributed therein. The LED light source is embedded in the first translucent structure. The LED light source is covered by the light scattering powder. The second translucent structure has a radius of R and an index of refraction of N1, while the first translucent structure has a radius of r, wherein R, r and N1 satisfy the following relation: N1<R/(2r?R).

Abstract: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

Abstract: A method for packaging an LED, includes steps: providing a supporting board and then dripping a gel mixed with fluorescent therein on the supporting board; scraping the gel over the supporting board with a scraper form a gelatinous fluorescent film on the supporting board, and solidifying the gelatinous fluorescent film pieces to form a solidified fluorescent film; cutting the solidified fluorescent film into individual pieces, and peeling the solid fluorescent films from the supporting board; attaching one piece of the fluorescent film on a light outputting surface of an LED die; mounting the LED die on a substrate, and electrically connecting the LED die to the circuit structure; and forming an encapsulation on the substrate to cover the LED die.

Abstract: A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Abstract: A method of manufacturing a light emitting diode (LED) comprising: providing a porous carrier, a base disposed on the carrier and a plurality of light emitting elements mounted on the base, wherein the carrier defines a plurality of micro through-holes extending through a first face to a second face of the carrier, and the base has electrical structures formed thereon electrically connecting to the light emitting elements, respectively; providing a mold to receive the carrier therein and distributing a phosphor glue on the base to cover the light emitting elements, and the mold defining an air outlet communicated with the through-holes of the carrier; vacuuming the mold via the air outlet to flatten an outer face of the phosphor glue; heating the phosphor glue and removing the mold; and removing the carrier.

Abstract: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

Abstract: An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects.

Abstract: An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to the first and the second electrodes. The luminescent conversion layer is located inside the reflector and comprises a first luminescent conversion layer and a second luminescent conversion layer with different specific gravities. A manufacturing method for the LED device is also provided.

Abstract: A method for manufacturing LEDs includes following steps: forming circuit structures on a substrate, each circuit structure having a first metal layer and a second metal layer formed on opposite surfaces of the substrate and a connecting section interconnecting the first and second metal layers; cutting through each circuit structure along a middle of the connecting section to form first and second electrical connecting portions insulated from each other via a gap therebetween; arranging LED chips on the substrate and electrically connecting the LED chips to the first and second electrical connecting portions; forming an encapsulation on the substrate to cover the LED chips; and cutting through the substrate and the encapsulation between the first and second electrical connecting portions of neighboring circuit structures to obtain the LEDs.

Abstract: A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer.

Abstract: An exemplary light emitting diode (LED) package includes a substrate having a first electrical portion and a second electrical portion formed thereon, two antioxidation layers formed on and electrically connected to the first electrical portion and the second electrical portion, respectively, and an LED chip disposed on the substrate and electrically connected to the two antioxidation layers.

Abstract: An LED package includes a substrate with two opposite lateral bulging portions, an LED die, an electrode structure, and a reflective layer. The substrate includes a first substrate and a second substrate stacked together; the first substrate and the second substrate are transparent; and the substrate includes an emitting surface for emitting light of the LED package. The electrode structure is sandwiched between the first substrate and the second substrate. The LED die is mounted in the substrate and electrically connected to the electrode structure. The reflective layer is formed on an outer surface of the substrate except the emitting surface and the bulging portions. The disclosure also provides a method for manufacturing such an LED package.

Abstract: A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween.

Abstract: A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides.