Abstract: A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a cavity is formed in one layer of the avalanche photodiode that extends to a depletion region that exists in the layer as a result of a voltage applied to the device. The plurality of contacts are formed in the cavity so that each of the contacts are positioned substantially adjacent the depletion region. In another embodiment, a plurality of contacts are formed in a cavity and an isolation structure comprised of a grid of semiconductor material is formed so as to be interposed between adjacent contacts. The isolation structure preferably forms a p-n junction with the surrounding semiconductor material and the p-n junction provides isolation between adjacent contacts.

Abstract: A semiconductor photodiode is configured to have its rear face light responsive with electrical contacts formed on the front face. The photodiode can be surface mounted, such as by solder, upon a carrier with the light responsive rear face up. An integral filter over the rear face confines light reaching the semiconductor substrate to desired wavelengths. In one embodiment, the photodiode also includes integral opaque layers over the front and rear faces of the substrate. The rear opaque layer includes an aperture to allow light to strike the rear face adjacent an active region. In another embodiment, the photodiode is configured for double-sided light sensitivity, and the front side faces an aperture through the carrier.

Abstract: A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a cavity is formed in one layer of the avalanche photodiode that extends to a depletion region that exists in the layer as a result of a voltage applied to the device. The plurality of contacts are formed in the cavity so that each of the contacts are positioned substantially adjacent the depletion region. In another embodiment, a plurality of contacts are formed in a cavity and an isolation structure comprised of a grid of semiconductor material is formed so as to be interposed between adjacent contacts. The isolation structure preferably forms a p-n junction with the surrounding semiconductor material and the p-n junction provides isolation between adjacent contacts.

Abstract: A solid state photodiode is configured to have its rear face light responsive and is electrically connected to a lead frame or flexible carrier with conductor traces, which includes an aperture to allow light to impact the rear face. A photodiode with light responsive front and rear faces, with or without filters, permits various applications to be implemented relatively inexpensively when compared to prior art systems.

Abstract: A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a cavity is formed in one layer of the avalanche photodiode that extends to a depletion region that exists in the layer as a result of a voltage applied to the device. The plurality of contacts are formed in the cavity so that each of the contacts are positioned substantially adjacent the depletion region. In another embodiment, a plurality of contacts are formed in a cavity and an isolation structure comprised of a grid of semiconductor material is formed so as to be interposed between adjacent contacts. The isolation structure preferably forms a p-n junction with the surrounding semiconductor material and the p-n junction provides isolation between adjacent contacts.

Abstract: A solid state photodiode is configured to have its rear face light responsive and is electrically connected to a lead frame or flexible carrier with conductor traces, which includes an aperture to allow light to impact the rear face. A photodiode with light responsive front and rear faces, with or without filters, permits various applications to be implemented relatively inexpensively when compared to prior art systems.

Abstract: A small, rugged photomultiplier tube is achieved by closely spacing a large area avalanche "photodetector" with respect to a photocathode in an opaque casing having a window for incident light. The photocathode and the avalanche photodetector have comparable areas and are closely spaced. The avalanche photodetector includes a PN junction which as to be close to the surface of the detector to maximize the response to electrons and reduce any direct response to light. The need for an electrostatic lens to focus electrons onto the small target characteristic of prior art photomultiplier tubes is obviated.

Abstract: A photosensitive semi-conductor device is disclosed having a matrix of non-translucent dots on its photosensitive surface. In an array of photosensitive semi-conductor devices, such as photodiodes, the non-translucent dot pattern applied to this photosensitive surface of each photodiode is used to regulate the output from each photodiode. The dot matrix is preferably sputtered onto the anti-reflection coating of the photosensitive surface of the photodiode.