Abstract: Solid, shaped and fired fibers of Ti4O7 and Ti5O9 are made by firing TiO2 fibers in a reducing atmosphere. In a first aspect, the TiO2 fibers are made by extruding into air a viscous TiO2 gel and heat treating the resulting green fibers to remove solvent, decompose and to volatilize undesired constituents to form electrically conductive, refractory fibers of Ti4O7 and Ti5O9. In a second aspect, solid, shaped and fired fibers of Ti4O7 and Ti5O9 are made by firing extruded fibers from mixtures of TiO2.

Abstract: A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity type in the first major surface adjacent to the gates. A plurality of channels of the second conductivity type each abuts a source/drain region and extends under a gate, each channel being laterally graded with a sloped P-N junction separating the channel region from the substrate of first conductivity type. In fabricating the vertical semiconductor rectifier device, a partial ion mask is formed on the surface of the semiconductor with the mask having a sloped surface which varies the path length of ions through the mask to form laterally-graded channel regions.

Abstract: The performance of electrochemical energy devices such as batteries, fuel cells, capacitors and sensors is enhanced by the use of electrically conducting ceramic materials in the form of fibers, powder, chips and substrates.

Abstract: A power rectifier having low on resistance, mass recovery times and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common metallization. This provides a low Vf path through the channel regions of the MOSFET cells to the source region on the other side of the integrated circuit. A thin gate structure is formed annularly around the pedestal regions on the upper surface of the device and a precisely controlled body implant defines the channel region and allows controllable device characteristics, including gate threshold voltage and Vf. A parallel Schottky diode is also provided which increases the switching speed of the MOSFET cells.

Abstract: A power rectifier having low on resistance, fast recovery times and very low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common metallization. A self aligned body implant and a shallow silicide drain contact region integrated with a metal silicide drain contact define a narrow channel region and allow very high cell density. This provides a low Vf path through the channel regions of the MOSFET cells to the contact on the other side of the integrated circuit. The present invention further provides a method for manufacturing a rectifier device which provides the above desirable device characteristics in a repeatable manner. Also, only two masking steps are required, reducing processing costs.

Abstract: The invention concerns a lead-acid battery having all the surfaces of all the electrodes under high pressure and their circumferences kept unchanged by support from mechanically rigid cell walls such that only the thickness of the electrodes is allowed to expand under strong resilient load during the discharge and return during charge. The pressure is 0.49-10.sup.5 -9.81-10.sup.5 Pa (0.5-10 kp/cm.sup.2), and may be obtained by separators or by springs applied to the outer sides of the cell container and may be changed for increased or decreased capacity. The construction of the tubular battery design, prevents material losses due to sludging and a long working life is obtained, since also a totally corroded lead conductor under high pressure may function as a current conductor. The rigid outer containers also allow high liquid pressure and thus a high oxygen solubility and oxygen recombination for sealed cells.