Patents Assigned to Advanced Silcon Materials, Inc.
  • Patent number: 5545387
    Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 13, 1996
    Assignee: Advanced Silcon Materials, Inc.
    Inventors: David W. Keck, Kenichi Nagai, Yoshifumi Yatsurugi, Hiroshi Morihara, Junji Izawa