Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
Type:
Grant
Filed:
May 11, 2020
Date of Patent:
June 7, 2022
Assignee:
Advanced Silicon Group Technologies, LLC
Inventors:
Brent A. Buchine, Marcie R. Black, Faris Modawar