Patents Assigned to Advanced Silicon Group Technologies, LLC
  • Patent number: 11355584
    Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: June 7, 2022
    Assignee: Advanced Silicon Group Technologies, LLC
    Inventors: Brent A. Buchine, Marcie R. Black, Faris Modawar