Abstract: Silicon beads are produced by chemical vapor deposition (CVD) on seed particles generated internal to a CVD reactor. The reactor has multiple zones, including an inlet zone where beads are maintained in a submerged spouted bed and an upper zone where beads are maintained in a bubbling fluidized bed. A tapered portion of the upper zone segregates beads by size. Systems for inspecting, sorting and transporting product beads are also disclosed.

Abstract: Silicon beads are produced by chemical vapor deposition (CVD) on seed particles generated internal to a CVD reactor. The reactor has multiple zones, including an inlet zone where beads are maintained in a submerged spouted bed and an upper zone where beads are maintained in a bubbling fluidized bed. A tapered portion of the upper zone segregates beads by size. Systems for inspecting, sorting and transporting product beads are also disclosed.

Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

Abstract: Disclosed is a process for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications, while maintaining the purity of a highly refined monosilane gas inside the reactor. The equipment includes a reactor vessel which encloses powder catchers consisting of cylindrical water jackets. Also within the vessel is a cylindrical water jacket which concentrically surrounds the powder catchers and which defines multiple reaction chambers. Control is effected in such a way that the temperature distribution in different sections inside the reactor is as follows in the ascending order: the powder catcher walls, the walls of the water jacket which defines the reaction chambers, and the lower wall of the vessel cover.

Abstract: The present invention is directed to a method for making substantially carbon-free polycrystalline silicon which comprises pyrolyzing a gaseous silicon compound on a heated starter filament mounted on a graphite chuck, said heated starter filament being maintained at a temperature sufficient to effect decomposition of the gaseous silicon compound to form polycrystalline silicon which is deposited thereon and by-product hydrogen, wherein the said graphite chuck is provided with a hydrogen impervious outer coating layer to prevent the by-product hydrogen from reacting with the graphite and form methane which decomposes as carbon on the deposited polycrystalline silicon.

Abstract: An improved fluidized bed reactor characterized by a peripheral heating zone annulus containing particles of the fluidized bed. The particles are heated in the heating zone annulus and transferred to an inner reaction zone. The particles enter the heating zone annulus at an upper inlet and exit the heating zone annulus at a lower outlet. The heated particles supply heat to the inner reaction zone.

Abstract: An improved fluidized bed reactor and a method for utilizing the fluidized bed reactor in the production of, for example, high purity polycrystalline silicon, by the pyrolysis of silane containing gas. The reactor being characterized by an entrainment zone located above a lower reaction zone. The entrainment zone having a cross-sectional area less than or equal to the cross-sectional area of the reaction zone and being capable of maintaining a fluidization gas velocity sufficient to entrain silicon powder particles, yet not sufficient to entrain silicon particles.

Abstract: An improved fluidized bed reactor characterized by a peripheral heating zone annulus containing particles of the fluidized bed. The particles are heated in the heating zone annulus and transferred to an inner reaction zone. The particles enter the heating zone annulus at an upper inlet and exit the heating zone annulus at a lower outlet. The heated particles supply heat to the inner reaction zone.

Abstract: Disclosed are .[.a.]. processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.