Publication number: 20100279011
Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (<300° C.) vapor deposition processes such as CVD and ALD, including bismuth aminidates, bismuth guanidates, bismuth isoureates, bismuth carbamates and bismuth thiocarbamates, bismuth beta-diketonates, bismuth diketoiminates, bismuth diketiiminates, bismuth allyls, bismuth cyclopentadienyls, bismuth alkyls, bismuth alkoxides, and bismuth silyls with pendant ligands, bismuth silylamides, bismuth chelated amides, and bismuth ditelluroimidodiphosphinates. Also described are methods of making such precursors, and packaged forms of such precursors suitable for use in the manufacture of microelectronic device products. These bismuth precursors are usefully employed to form bismuth-containing films, such as films of GBT, Bi2Te3, Bi4Ti3O12, SrBi2Ta2O9, Bi—Ta—O, BiP and thermoelectric bismuth-containing films.
Type:
Application
Filed:
October 31, 2008
Publication date:
November 4, 2010
Applicant:
Advanced Technology Materials, Inc.
Inventors:
Tianniu Chen, Chongying Xu, Bryan C. Hendrix, William Hunks, Thomas M. Cameron, Matthias Stender, Gregory T. Stauf, Jeffrey F. Roeder
Publication number: 20100209610
Abstract: A metal precursor, selected from among: (i) precursors of the formula (NR1R2)4-xM(chelate)x, and (ii) precursors of the formula (NR10R11)4-2yM(12RN(CH2)zNR13)y, wherein: x=1, 2, 3, or 4; M=Ti, Zr, or Hf; each chelate is independently selected from among guanidinate, amidinate, and isoureate ligands of specific formula; y is 0, 1, or 2; and each of R1, R2, R10, R11, R12 and R13 is independently selected from among H, C1-C12 alkyl, C1-C12 alkylamino, C1-C12 alkoxy, C3-C10 cycloalkyl, C2-C12 alkenyl, C7-C12 aralkyl, C7-C12 alkylaryl, C6-C12 aryl, C5-C12 heteroaryl, C1-C10 perfluoroalkyl, and silicon-containing groups selected from the group consisting of silyl, alkylsilyl, perfluoroalkylsilyl, triarylsilyl and alkylsilylsilyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl, acetylalkyl, and N-bonded functionality between two different nitrogen atoms of the precursor can be C1-C4 alkylene, silylene (—SiH2—), or C1-C4 dialkylsilylene.
Type:
Application
Filed:
July 16, 2008
Publication date:
August 19, 2010
Applicant:
ADVANCED TECHNOLOGY MATERIALS, INC.
Inventors:
Thomas M. Cameron, Chongying Xu