Abstract: A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.
Type:
Grant
Filed:
March 30, 2005
Date of Patent:
April 29, 2008
Assignee:
Advanced Tehnology Materials, Inc.
Inventors:
Elizabeth L. Walker, Jeffrey A. Barnes, Shahriar Naghshineh, Kevin P. Yanders
Abstract: A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.
Type:
Grant
Filed:
September 18, 2001
Date of Patent:
March 22, 2005
Assignee:
Advanced Tehnology Materials, Inc.
Inventors:
Thomas H. Baum, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder