Abstract: A method for treating at least one substrate (15), particularly wafers, in a liquid medium (3). In a first step, the substrate (15) is lifted in the liquid medium (3) until the substrate (15) is at least partially lifted out of the liquid medium (3) and, in a second step, is passed on at least one point protruding out of the liquid medium (3).
Abstract: A cyclic bubble generation and termination process can be used to effectively clean objects in a liquid. The bubbles can be generated from dissolved gas in the liquid during a pressurizing phase of the cyclic bubble process. Alternatively, the bubbles can be generated from as a by-product in a chemical reaction between chemicals in the liquid and material or chemicals at the surface of a part being processed. A vacuum process or a hyperbaric process can be used for cycling the pressure.
Abstract: Silicon plates can be cleaned, rinsed and dried by hyperbaric superheated liquid and superheated steam. The superheated liquid can be used to clean and rinse the silicon plates after being saw from a silicon block. A slow drain can be open to remove the superheated liquid. A fast drain then can be open, preferably to atmosphere, to allow steam to vent through bottom. The fast drain can function as a drying process, vaporizing water droplets down the drain with the escaping steam.
Abstract: Polysilicon granules can be cleaned, rinsed and dried by hyperbaric superheated liquid and superheated steam. The superheated liquid can be used to rinse and heating the polysilicon granules. A slow drain can be open to remove the superheated liquid. A fast drain then can be open, preferably to atmosphere, to allow steam to vent through bottom. The fast drain can function as a drying process, vaporizing water droplets down the drain with the escaping steam.
Abstract: A dynamic cyclic nucleation transport (D-CNX) process can be used to wet process an object, such as cleaning or etching. In the D-CNX process, the chamber volume is cyclically enlarged and reduced, effectively reducing and increasing the chamber pressure, respectively. During the pressure reduction phase, bubbles can be generated, which can be terminated or travel to the liquid surface during the pressure increment phase. The generation and termination of bubbles can clean or etch the object, even in hard to reach places.