Abstract: Silicon substrates are applied to the package structure of solid-state lighting devices. Wet etching is performed to both top and bottom surfaces of the silicon substrate to form reflecting cavity and electrode access holes. Materials of the reflecting layer and electrode can be different from each other whose preferred materials can be chosen in accordance with a correspondent function. Formation of the electrode can be patterned by an etching method or a lift-off method.
Type:
Grant
Filed:
September 25, 2008
Date of Patent:
August 2, 2011
Assignee:
Advances Optoelectronic Technology, Inc.