Abstract: A semiconductor device has a substrate with a diamond material and a first diamond layer formed over a surface of the substrate. An insulating layer is formed over the first diamond layer. The insulating layer has a first graded edge and a second graded edge. A second diamond layer is formed over the first diamond layer. The first diamond layer has a dopant material and the second diamond layer has an intrinsic material. A third diamond layer can be formed over the second diamond layer. A first conductive layer is formed over the insulating layer and contacts the first diamond layer, and a second conductive layer is formed over the insulating layer and contacts the second diamond layer. The first conductive layer and second conductive layer can be interdigitated. The semiconductor device can be a vertical or quasi-vertical diode or transistor.

Abstract: A diamond-based particle detector includes a diamond substrate that includes a first side and a second side; a first side first doped layer contacting the first side of the diamond substrate; a first metal contact contacting the first side first doped layer, a first side intrinsic diamond layer contacting the first side first doped layer, (i) a second side first doped layer or (ii) a second side intrinsic diamond layer contacting the second side of the diamond substrate; and a second metal contact contacting (i) the second side first doped layer or (ii) the second side intrinsic diamond layer.

Abstract: A semiconductor device has a substrate with a diamond material. A surface of the substrate is prepared using a first reaction process. The first reaction process can be etching or polishing with oxygen and methane at a gas mixture ratio of about 1:2. The surface of the substrate is exposed to hydrogen plasma prior to the first reaction process. A diamond layer is formed over the surface of the substrate using a second reaction process. The second reaction process can be nucleation or epitaxial growth. The transition from the first reaction process to the second reaction process is seamless. The transition is seamless by nature of the second reaction process continuing from the first reaction process. The diamond layer can be formed over the surface of the substrate using a third reaction process, such as an epitaxial growth. A semiconductor device is formed in the substrate and diamond layer.