Patents Assigned to Advnaced Micro Devices, Inc.
  • SONOS memory cell having high-K dielectric
    Patent number: 7446369
    Abstract: A semiconductor memory device may include an intergate dielectric layer of a high-K dielectric material interposed between a floating gate and a control gate. With this intergate high-K dielectric in place, the memory device may be erased using Fowler-Nordheim tunneling.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: November 4, 2008
    Assignees: Spansion, LLC, Advnaced Micro Devices, Inc.
    Inventors: Takashi Whitney Orimoto, Joong Jeon, Hidehiko Shiraiwa, Simon S. Chan, Harpreet K. Sachar