Patents Assigned to AE Polysilicon Corporation
  • Publication number: 20120267441
    Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.
    Type: Application
    Filed: July 6, 2012
    Publication date: October 25, 2012
    Applicant: AE Polysilicon Corporation
    Inventors: Robert Froehlich, David Mixon
  • Patent number: 8235305
    Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.
    Type: Grant
    Filed: April 20, 2010
    Date of Patent: August 7, 2012
    Assignee: AE Polysilicon Corporation
    Inventors: Robert Froehlich, David Mixon
  • Publication number: 20120063984
    Abstract: In one embodiment, the instant invention includes a method having steps of: feeding a fluidizing gas stream having at least 80 percent of halogenated silicon source gas or mixture of halogenated silicon source gases to fluidize silicon seeds in a reactor, achieving the fluidization of silicon seeds in a reaction zone prior to when the fluidizing gas stream reaches at least 600 degrees Celsius; heating the fluidized silicon seeds residing within the reaction zone to a sufficient reaction temperature to result in more than 50% of the equilibrium conversion for the thermal decomposition reaction in the reaction zone of the reactor; and maintaining the fluidizing gas stream at the sufficient reaction temperature and a sufficient residence time within the reaction zone hereby resulting in more than 50% of the equilibrium conversion for the thermal decomposition reaction in a single stage within the reaction zone to produce an elemental silicon.
    Type: Application
    Filed: November 10, 2011
    Publication date: March 15, 2012
    Applicant: AE Polysilicon Corporation
    Inventors: Ben Fieselmann, David Mixon, York Tsuo