Patents Assigned to Aerius Photonics LLC
  • InGaAsSbN photodiode arrays
    Patent number: 8324659
    Abstract: Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: December 4, 2012
    Assignee: Aerius Photonics LLC
    Inventors: Michael MacDougal, Jonathan Geske, John E. Bowers
  • InGaAsSbN photodiode arrays
    Patent number: 7915639
    Abstract: Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
    Type: Grant
    Filed: October 20, 2008
    Date of Patent: March 29, 2011
    Assignee: Aerius Photonics LLC
    Inventors: Michael MacDougal, Jonathan Geske, John E. Bowers