Patents Assigned to Agare Systems Inc.
  • Semiconductor device having a doped lattice matching layer and a method of manufacture therefor
    Publication number: 20040183140
    Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. The semiconductor device may include a doped buried layer located over a doped substrate and a doped epitaxial layer located over the doped buried layer. The semiconductor device may further include a first doped lattice matching layer located between the substrate and the buried layer and a second doped lattice matching layer located between the doped buried layer and the doped epitaxial layer.
    Type: Application
    Filed: March 31, 2004
    Publication date: September 23, 2004
    Applicant: Agare Systems Inc.
    Inventors: Wen Lin, Charles W. Pearce