Abstract: Chemical vapor deposited silicon carbide articles and the methods of making them are disclosed. The chemical vapor deposited silicon carbide articles are composed of multiple parts which are joined together by sintered ceramic joints. The joints strengthen and maintain tolerances at the joints of the articles. The articles may be used in semi-conductor processing.
Type:
Application
Filed:
February 24, 2011
Publication date:
November 10, 2011
Applicants:
AGC Electronic Materials, Rohm and Haas Electronic Materials LLC
Inventors:
Michael A. PICKERING, Jamie L. Mayer, Kevin D. Lais
Abstract: Chemical vapor deposited silicon carbide articles and the methods of making them are disclosed. The chemical vapor deposited silicon carbide articles are composed of multiple parts which are joined together by sintered ceramics joints. The joints strengthen and maintain tolerances at the joints of the articles. The articles may be used in semi-conductor processing.
Type:
Application
Filed:
March 7, 2008
Publication date:
September 18, 2008
Applicants:
Rohm and Haas Electronic Materials LLC, AGC Electronic Materials
Inventors:
Michael A. Pickering, Jamie L. Mayer, Kevin D. Lais