Patents Assigned to AGENCY FPR SCIENCE, TECHNOLOGY AND RESEARCH
  • Dynamic reference scheme for improving read margin of resistive memory array
    Patent number: 10706904
    Abstract: A method of providing a reference voltage for reading of a resistive memory array, and a read circuit for reading of a resistive memory array. The method comprises the steps of generating a first reference voltage when a bitline of the resistive memory array is in a first resistance state, and generating a second reference voltage when the bitline is in a second resistance state; wherein the first reference voltage is different from the first reference voltage and the first resistance state is different from the second resistance state.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: July 7, 2020
    Assignees: NATIONAL UNIVERSITY OF SINGAPORE, AGENCY FPR SCIENCE, TECHNOLOGY AND RESEARCH
    Inventors: Kien Trinh Quang, Massimo Alioto, Sergio Ruocco