Abstract: A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.

Abstract: A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.

Abstract: A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.

Abstract: A non-contact apparatus and method for measuring of the leakage current and capacitance of p-n junctions in test structures within scribe lanes of IC product wafers is disclosed. The apparatus comprises of a light source optically coupled with a fiber to a transparent electrode at the end of the fiber, which is brought close to the p-n junction under test. The ac signal generated from the test p-n junction is captured by this transparent and conducting coating electrode. The leakage current of a test p-n junction is determined using the frequency dependence of junction photo-voltage signal and reference signals from a p-n junction with low leakage current and known capacitance.

Abstract: This invention is a device for measuring of absolute distances by means of low coherence optical interferometry. The proposed apparatus eliminates thermal of the conventional fiber optic interferometers caused by variation of the refractive index of the optical fiber material to change of the temperature.

Abstract: A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.

Abstract: An apparatus for the automatic testing the adhesion characteristics of thin film and coating to silicon wafers, and the processing of the data obtained thereby to present to the user a rapid and accurate forecast of the thin film's behavior in a selected processing environment. The apparatus of the invention heats and cools samples while automatically monitoring for debonding. Information collected from the optical and thermal devices are processed by computer for analysis and recorded for cataloging. Information is collected and processed over time while samples are subjected to selected temperature environments to provide a data base of adhesion characteristics of thin films and coatings.