Abstract: The invention relates to metrology of thin dielectric layers on semiconductor wafers, interfaces of dielectric layers to the wafer substrates and substrates properties of semiconductor wafers. The invention allows measurement of the metrology data for thin dielectric layers on semiconductor wafers electrically via using contact electrodes that align their contact surface to the wafer surface locally at the measurement sites.
Type:
Grant
Filed:
January 26, 2005
Date of Patent:
April 25, 2006
Assignee:
Ahbee 2, L.P., A California Limited Partnership
Inventors:
Vitali Souchkov, Vladimir Faifer, Victor Huang, Eugene Fukshansky, Alexander Artjomov, Anatoli Skljarnov