Abstract: A method for controlling the velocity of a pipeline pig, the method including, introducing a pressurized gas into a section of pipeline to be treated and maintaining the velocity of a smart pipeline pig at a predetermined velocity by regulating the pressurized gas to a predetermined volume. A method for controlling the velocity of a pipeline pig, the method including fluidically connecting a first skid to a first end of a section of pipeline to be treated, fluidically connecting a second skid to a second end of the section of pipeline to be treated, introducing a pressurized gas into the section of pipeline to be treated via the first skid, launching a smart pipeline pig into the section of pipeline to be treated, and maintaining the velocity of the smart pipeline pig at a predetermined velocity by regulating the pressurized gas to a predetermined volume.

Abstract: This disclosure describes an improved etch selectivity of a-C mask during HAR etch processes by using a cyclic etch process. The process has two principle steps: 1) A partial etch using a polymerizing etching recipe with lower O2 and extra polymer generation where a-C mask selectivity to dielectric (e.g. for SiO2 or ONON layers) is high; and 2) A polymer cleaning step using Kr sputter, Xe sputter, NF3, SF6, IF7, IF5, CF4, or other F based etching process, with or without bias, to etch the polymer. The polymer cleaning step may include addition of O containing molecules such as O2, CO, CO2, NO, NO2, N2O, SO2, and/or COS. These steps are repeated between a partial etch process (polymer creating) and polymer cleaning step (cycle etching).

Abstract: A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x?0, y?1, z?0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: A process for purifying a helium containing stream, including introducing a feed gas stream into a first membrane separation unit, thereby producing a first permeate stream, and a first residue stream. Introducing the first permeate stream into a first dehydrogenation unit, thereby producing a first dehydrogenated gas stream. Introducing the first dehydrogenated gas stream into a second membrane separation unit, thereby producing a second permeate stream, and a second residue stream. Introducing the second permeate stream into a second dehydrogenation unit, thereby producing a second dehydrogenated gas stream. And introducing the second dehydrogenated gas stream into a helium pressure swing adsorption unit, thereby producing a product helium stream, and a helium-lean stream. Wherein the product helium stream contains more than 99.9% mol helium, and less than 0.1% mol hydrogen.

Abstract: Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising: sequentially or simultaneously exposing the substrate to a vapor of an etchant including a hydrofluorocarbon or fluorocarbon compound and an additive compound, the substrate having a film disposed thereon and a pattered mask layer disposed on the film; activating a plasma to produce an activated hydrofluorocarbon or fluorocarbon compound and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compound and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

Abstract: Methods for purification of a fluorocarbon or hydrofluorocarbon containing at least one undesired halocarbon impurities comprise flowing the fluorocarbon or hydrofluorocarbon through at least one adsorbent beds to selectively adsorb the at least one undesired halocarbon impurities through physical adsorption and/or chemical adsorption, wherein the at least one adsorbent beds contain a metal oxide supported on an adsorbent in an inert atmosphere.

Abstract: A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula: (NR8R9)(NR1R2)Ga[(R3R4N)Cx(R5R6)(NR7)]??(I) (Cy-N)2Ga[(R3R4N)Cx(R5R6)(NR7)]??(II) wherein, R1 to R9 are independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; R1 to R9 may be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.

Abstract: An etching method for forming a high aspect ratio aperture by selectively etching one or more silicon-containing films in a substrate using a patterned mask layer deposited on top of the one or more silicon-containing films comprises: mounting the substrate in a processing chamber; introducing an etching gas containing a vapor of an oxygen-containing hydrofluorocarbon into the processing chamber; converting the etching gas to a plasma; and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the high aspect ratio aperture, wherein the oxygen-containing hydrofluorocarbon has a general formula CxHyFzOn, where 2?x?13, 1?y?15, 1?z?21, 1?n?3.

Abstract: An etching method for forming an aperture by selectively etching one or more silicon-containing films in a substrate using a patterned mask layer deposited on top of the one or more silicon-containing films comprises: mounting the substrate in a processing chamber; introducing an etching gas containing a vapor of an oxygen-containing hydrofluorocarbon into the processing chamber; converting the etching gas to a plasma; and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the aperture, wherein the oxygen-containing hydrofluorocarbon has a general formula CxHyFzOn, where 2?x?13, 1?y?15, 1?z?21, 1?n?3.

Abstract: A method of forming a conformal and continuous crystalline Si film on a surface of a substrate comprises: exposing the substrate to a vapor of a first Si-containing precursor under a first temperature; allowing a seed film being formed onto the surface; exposing the substrate to a vapor of a second Si-containing precursor and a vapor of a dopant precursor under a second temperature; depositing a doped amorphous Si-containing film onto the seed film by a chemical vapor deposition (CVD) process; and annealing the substrate to crystalize the doped amorphous Si-containing film forming the conformal and continuous crystalline Si film on the surface. The first Si-containing precursor is (diisobutylamine)trisilane ((iBu)2-N—(SiH2)2—SiH3).

Abstract: A single compressor is used to separately compress permeate from cascaded first and second gas separation membrane-based separation units and residue from a fourth gas separation membrane-based separation unit in order to avoid too high a CO2 partial pressure in the compressed permeate. After the permeates from the first and second stages are compressed, the compressed stream is fed to a third gas separation membrane-based separation unit.

Abstract: Internally reheated sweep gas-aided membrane gas separation module in which the sweep gas is expanded retentate that is warmed through heat exchange with non-expanded retentate within the module.

Abstract: A method and system for purification of helium and CO2 from a stream containing at least Helium, CO2, nitrogen or methane uses a combination of cryogenic, membrane and adsorption technologies.

Abstract: In a crude oil purification process including phase separators, a vapor recovery unit (VRU), and dew pointing/dehydration and CO2 removal membranes, instead of compressing the low boiling point (i.e., C1-5) hydrocarbon vapor stream from the VRU along with the main portion of gas from the separation train and feeding it to the membranes, it is compressed and dehydrated along with the H2O/C3+ hydrocarbon enriched permeate from the dew pointing and dehydration membranes.

Abstract: The invention concerns a manual artificial respiration bag (1) for ventilating a patient in need thereof, comprising a deformable bag (10) with a gas inlet (11), a gas outlet (12) and an inner volume (13) for a respiratory gas; an upstream conduct element (20) fluidly connected to the gas inlet (11) of the deformable bag (10), and comprising a gas entry port (21); and a downstream conduct element (30) fluidly connected to the gas outlet (12) of the deformable bag (10), comprising an exhaust valve (35) comprising an exhaust port (36). A venturi device (50) comprising a main body (110) comprising a venturi nozzle (120); at least one oxygen inlet (131) for providing oxygen; at least one air inlet (132) for providing air; a mixing chamber (133) for mixing therein oxygen and air and obtaining an air/oxygen mixture; and gas selection means (110, 130) for selecting oxygen or an air/oxygen mixture as a desired gas to be provided to the venturi nozzle (120).

Abstract: A quality control method for the preparation of dry compressed gas cylinder including passivating and/or preparing the compressed gas cylinder with the technique to be validated, filling the passivated/prepared compressed gas cylinder with gaseous carbon dioxide to a normal working pressure, wherein the gaseous carbon dioxide has a known ?18O isotope ratio, maintaining the pressurized gas cylinder at ambient temperature for a first predetermined period of time, and gradually emptying the pressurized gas cylinder, while simultaneously measuring the ?18O isotopic ratio, wherein a predetermined variation in the measured isotopic ratio of ?18O indicates a properly prepared cylinder.

Abstract: A hollow fiber membrane bundle useful for manufacturing a wide variety of hollow fiber membrane modules having different flow configurations includes hollow fiber membranes arranged around a porous support tube, a cured resin tubesheet formed at first end of the bundle, and either a cured resin nub or a cured resin tubesheet formed at a second end of the bundle. The bore(s) of the hollow fiber membranes are open at a face of the tubesheet adjacent the first end of the bundle. The tubesheet has an annular structure that encapsulates the hollow fiber membranes and the porous support tube at the first end of the bundle but which does not completely block a bore of the porous support tube, wherein the collection tube has a plurality of orifices formed therein at least at positions adjacent the nub.

Abstract: A hollow fiber membrane bundle useful for manufacturing a wide variety of hollow fiber membrane modules having different flow configurations includes hollow fiber membranes arranged around a porous support tube, a cured resin tubesheet formed at first end of the bundle, and either a cured resin nub or a cured resin tubesheet formed at a second end of the bundle. The bore(s) of the hollow fiber membranes are open at a face of the tubesheet adjacent the first end of the bundle. The tubesheet has an annular structure that encapsulates the hollow fiber membranes and the porous support tube at the first end of the bundle but which does not completely block a bore of the porous support tube, wherein the collection tube has a plurality of orifices formed therein at least at positions adjacent the nub.

Abstract: The invention relates to a device for injecting a fluid, in particular a cryogenic fluid, the device comprising a fluid feed head and a fluid dispenser body, detachably mounted on said feed head, said feed head comprising a groove for circulating the fluid fed to said body, said groove being closed when the body is mounted on the feed head and said groove being open when the feed head and the body are detached from one another.