Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers f using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N?C—R; (N@C—)—(R)—(—C?N); Rx[-C?N(Rz)]y; and R(3-a)-N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.

Abstract: Methods and systems for high precision, continuous blending of mixtures, and particularly mixtures having at least two distinct chemical components, are disclosed. More particularly, the disclosed methods and systems provide high precision, continuous blending of buffered oxide etch mixtures containing water, ammonium fluoride, and hydrofluoric acid.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Methods for isotropic etching at least a portion of a silicon-containing layer on a sidewall of high-aspect-ratio (HAR) apertures formed on a substrate in a reaction chamber are disclosed. The HAR aperture formed by plasma etching a stack of alternating layers of a first silicon-containing layer and a second silicon-containing layer, the second silicon-containing layer is different from the first silicon-containing layer. The method comprising the steps of: a) introducing a fluorine containing etching gas selected from the group consisting of nitrosyl fluoride (FNO), trifluoroamine oxide (F3NO), nitryl fluoride (FNO2) and combinations thereof into the reaction chamber; and b) removing at least a portion of the second silicon-containing layers by selectively etching the second silicon-containing layers versus the first silicon-containing layers with the fluorine containing etching gas to produce recesses between the first silicon-containing layers on the sidewall of the HAR aperture.

Abstract: Liquid tank measuring systems that weigh/measure the amount of liquid in a fixed tank/vessel are disclosed. Also disclosed are methods that provide load cell failure detection of the liquid tank measuring system and the ability to continue operations post load cell failure detection.

Abstract: A packing article for the storage and/or transport of items and materials requiring high levels of cleanliness is described. Methods of making and using the packaging article are also described. The packaging article may be used to store or transport, for example, advanced optical components, or materials and components used in the manufacturing of microelectronic devices or optical components. A method of making the packaging article includes contacting the packaging article with organic solvent(s) and acidic solution(s) and rinsing with ultrapure water. Interior cleanliness levels for various contaminants, such as, metals, anionic materials, organic compounds, and particles may be verified and the packaging articles may be labeled and sorted according to cleanliness level.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: A packing article for the storage and/or transport of items and materials requiring high levels of cleanliness is described. Methods of making and using the packaging article are also described. The packaging article may be used to store or transport, for example, advanced optical components, or materials and components used in the manufacturing of microelectronic devices or optical components. A method of making the packaging article includes contacting the packaging article with organic solvent(s) and acidic solution(s) and rinsing with ultrapure water. Interior cleanliness levels for various contaminants, such as, metals, anionic materials, organic compounds, and particles may be verified and the packaging articles may be labeled and sorted according to cleanliness level.

Abstract: Si(OEt)2[CH2—Si(OEt)3]2 compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula Si(OEt)2Cl2.

Abstract: A SiH[CH2—Si(OEt)3]3 carbosilane compound is synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula SiHCl3.

Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Abstract: Methods and systems for chemical management. In one embodiment, a blender is coupled to a processing system and configured to supply an appropriate solution or solutions to the system. Solutions provided by the blender are then reclaimed from the system and subsequently reintroduced for reuse. The blender may be operated to control the concentrations of various constituents in the solution prior to the solution being reintroduced to the system for reuse. Some chemicals introduced to the system may be temperature controlled. A back end vacuum pump subsystem separates gases from liquids as part of a waste management system.

Abstract: Systems for controlling fluids in semiconductor processing systems are disclosed. The disclosed systems comprise a chemical blender, a reclaim tank, a dispense system, two chemical monitors, a controller, and a reclamation line in fluid communication with an outlet of the process station and coupled to the reclaim tank. The reclaim tank mixes solution from the chemical blender and the reclamation line. One of the two chemical monitors the mixed solution downstream from the dispense system. The controller is configured to flow the mixed solution to the process station upon determination by the first chemical monitor that at least one chemical compound in the mixed solution is at a predetermined concentration. The second chemical monitor monitors the reclaimed portion of the mixed solution to determine whether the at least one chemical compound is at a predetermined concentration before being reintroduced into the reclaim tank.

Abstract: Methods and systems for chemical management. In one embodiment, a blender is coupled to a processing system and configured to supply an appropriate solution or solutions to the system. Solutions provided by the blender are then reclaimed from the system and subsequently reintroduced for reuse. The blender may be operated to control the concentrations of various constituents in the solution prior to the solution being reintroduced to the system for reuse. Some chemicals introduced to the system may be temperature controlled. A back end vacuum pump subsystem separates gases from liquids as part of a waste management system.

Abstract: Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Abstract: Systems for controlling fluids in semiconductor processing systems are disclosed. The disclosed systems comprise a chemical blender, a reclaim tank, a dispense system, two chemical monitors, a controller, and a reclamation line in fluid communication with an outlet of the process station and coupled to the reclaim tank. The reclaim tank mixes solution from the chemical blender and the reclamation line. One of the two chemical monitors the mixed solution downstream from the dispense system. The controller is configured to flow the mixed solution to the process station upon determination by the first chemical monitor that at least one chemical compound in the mixed solution is at a predetermined concentration. The second chemical monitor monitors the reclaimed portion of the mixed solution to determine whether the at least one chemical compound is at a predetermined concentration before being reintroduced into the reclaim tank.

Abstract: Methods of purifying H2Se by removing H2S and/or H2O are disclosed. The amount of H2S in the H2Se-containing gas is reduced below 10 ppmv by passing the H2Se-containing gas through an AW-500 molecular sieve. H2S and H2O are removed by passing H2Se through a 4 A molecular sieve and subsequently passing H2Se through an AW-500 molecular sieve.