Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

Abstract: The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.

Abstract: The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in ?1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

Abstract: Solid-state membrane modules comprising at least one membrane unit, where the membrane unit has a dense mixed conducting oxide layer, and at least one conduit or manifold wherein the conduit or manifold comprises a dense layer and at least one of a porous layer and a slotted layer contiguous with the dense layer. The solid-state membrane modules may be used to carry out a variety of processes including the separating of any ionizable component from a feedstream wherein such ionizable component is capable of being transported through a dense mixed conducting oxide layer of the membrane units making up the membrane modules. For ease of construction, the membrane units may be planar.

Abstract: An apparatus for the cryogenic distillation of air includes an assembled unit that has a first distillation column module within which is provided a cryogenic distillation column; a heat exchange module within which is provided heat exchange means for cooling column feed air to a cryogenic distillation temperature; and at least one further processing unit. The or each distillation column, the heat exchange means, and the or each further processing unit are operationally interconnected, and the assembled unit is suitable for transportation to and erection at the site for a cryogenic air separation plant. Construction of a cryogenic air distillation plant is simplified resulting in a reduction in construction cost and time of construction. In addition, as components of the apparatus are self-contained within modules, the risk of contamination of the internal components is reduced, thus improving control of the quality of the construction.

Abstract: A compound comprising one or more polyfunctionalized pyrrolyl anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-pyrrolyl anion. Synthesis of the novel compounds and their use to form BST films is also contemplated.

Abstract: A plurality of metal-containing complexes of a polydentate beta-ketoiminate, one embodiment of which is represented by the structure are shown: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; wherein R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having from 1 to 10 carbon atoms; R2 can be from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is an alkylene bridge; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and they can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract: Containerized gas separation system comprising (a) a container having an interior, an exterior, and an exterior volume defined by the exterior dimensions of the container and (b) a pressure swing adsorption system installed in the interior of the container and adapted to recover a product gas from a feed gas mixture, the pressure swing adsorption system being adapted to deliver the product gas at a product gas flow rate, wherein the ratio of the exterior volume of the container to the product gas flow rate is less than about 2000 ft3/(ton per day).

Abstract: A method of operating a furnace having process tubes and multiple burners where it is desired to conform the temperatures of the process tubes to selected target temperature criterion. The present method provides a systematic and quantitative approach to determine how to adjust burner flow rates to result in desired tube wall temperatures, for example to minimize the temperature deviation between tube wall temperatures at a predetermined elevation in the furnace.

Abstract: The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiH3Cl, SiH2Cl2, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

Abstract: During the conventional temperature swing adsorption (TSA) process, NF3 co-adsorbed with the impurities is vented during regeneration. This invention is a novel TSA cycle in which the co-adsorbed NF3 is recovered. In this novel TSA cycle, a control scheme is used to stop the adsorption prior to the saturation of the adsorber with impurities and use a recovery purge gas (either co-current or counter-current) to release the co-adsorbed NF3 off the saturated adsorber. The effluent of the inert purge gas can be combined with the effluent of the on-stream vessel or can be recycled to the feed of the on-stream vessel. 10%-100% of the co-adsorbed NF3 is recovered and made available as product in this novel TSA cycle. Thus the overall process yield of NF3 is increased. The removing of the co-adsorbed NF3 from the adsorber also prevents adsorber degradation thus prolonging the useful life of the adsorber.

Abstract: A coolant delivery system and method for maintaining a temperature within a predetermined range of a set-point temperature in a vessel into which a coolant gas is discharged or a temperature of a material onto which the coolant gas is discharged. The coolant gas results from the mixing of a supply gas with a cryogen. Temperature regulation is provided by regulating the flow rate of a cryogen using a proportional valve, while providing an essentially constant flow rate of a supply gas.

Abstract: An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

Abstract: An apparatus and method for monitoring and/or controlling cryogenic cooling by measuring the opacity of the vapor cloud (113) generated from a cryogenic cooling device (112). The opacity is determined by measuring the reduction in intensity of a light beam (127) passed through the vapor cloud (113). The opacity measurements are used to control an operating parameter of the system, such as the cooling rate of the cryogenic cooling device (112). The opacity measurements may be normalized to compensate for variables, other than temperature of the workpiece (119) and cooling rate, which may affect the opacity of the vapor cloud (113).

Abstract: A hydrogen dispenser comprises a programmable controller and a user interface operably connected to the programmable controller. The programmable controller has a plurality of user-selectable hydrogen dispensing rate algorithms. The user interface offers the plurality of user-selectable hydrogen dispensing rate algorithms and is used for setting a user-selected dispensing rate algorithm from among the plurality of user-selectable hydrogen dispensing rate algorithms.

Abstract: A process and apparatus for producing a hydrogen-containing gas in a reformer where a furnace, which is independent of the reformer, heats the effluent from a prereformer prior to reacting the prereformer effluent in the reformer. The prereformer effluent may be heated in a heat exchange tube in the furnace where the heat exchange tube is positioned in the furnace to preclude direct radiation from any flames in the furnace thereby preventing local overheating of the heat exchange tube and preventing carbon formation in the heat exchange tube. Fuel and oxidant gas may be introduced into the furnace with significant excess oxidant gas, having a stoichiometric ratio of 1.8 to 2.8 for controlling the temperature of the heat exchange tube.

Abstract: The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure: —(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n— where Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1?m, and at least one of the aryl radicals is grafted to the backbone of the polymer.