Patents Assigned to aiwan Semiconductor Manufacturing Company, Ltd.
  • Patent number: 11323101
    Abstract: A clock circuit includes a latch circuit, a memory state latch circuit, a memory state trigger circuit and a clock trigger circuit. The latch circuit is configured to latch an enable signal, and to generate a latch output signal based on a first clock signal or an output clock signal. The memory state latch circuit is configured to generate the output clock signal responsive to a first control signal. The memory state trigger circuit is coupled to the memory state latch circuit, and configured to adjust the output clock signal responsive to the latch output signal. The clock trigger circuit is coupled to the latch circuit or the memory state trigger circuit by a first node, configured to generate the first clock signal responsive to a second clock signal, and configured to control the latch circuit and the memory state trigger circuit based on the first clock signal.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: May 3, 2022
    Assignee: AIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hao-I Yang, Fu-An Wu, Yangsyu Lin, Chiting Cheng, Cheng Hung Lee, Chen-Lin Yang
  • Patent number: 8105954
    Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.
    Type: Grant
    Filed: October 20, 2008
    Date of Patent: January 31, 2012
    Assignee: Aiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Wei Wang, David Ding-Chung Lu, Ching-Yu Chang
  • Patent number: 7971119
    Abstract: A method for defect-based scan analysis comprises, determining a neighborhood net for a circuit node, injecting defects into the neighborhood net, modeling the defects with stuck-at-0 and stuck-at-1 fault models, generating and applying test patterns to the neighborhood net, determining whether the injected defects are observable as faults, adding the test patterns to a set of effective test patterns if the defects are observable, mapping the test patterns to possible stuck-at-0 faults or stuck-at-1 faults, collecting stuck-at-0 and stuck-at-1 fault test patterns, performing stuck-at-0 and stuck-at-1 fault simulations using the stuck-at-0 and stuck-at-1 fault test patterns, respectively, generating first and second fault lists, combining first and second fault lists into combined fault lists, deriving a description of the combined fault lists using a complete set of fault models, filtering the combined fault lists to yield a collection of effective faults, and determining a defect for each of the effective fa
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: June 28, 2011
    Assignee: aiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Will Hsu