Patents Assigned to AIXTRON
  • PREPARING A SEMICONDUCTOR SURFACE FOR EPITAXIAL DEPOSITION
    Publication number: 20160225608
    Abstract: Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.
    Type: Application
    Filed: January 28, 2016
    Publication date: August 4, 2016
    Applicant: AIXTRON
    Inventors: Maxim Kelman, Shahab Khandan, Scott Dunham, Tac van Huynh, Kenneth B.K. Teo