Abstract: The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7?) of a substrate (7) which lies on a supporting surface (4?) of a susceptor, said supporting surface (4?) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4?) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4?) is lower than the temperature (TG) of the gas inlet element (3).

Abstract: The invention relates to a method for depositing especially crystalline layers on one or more, especially crystalline substrates in a process chamber by means of reaction gases that are introduced into the process chamber and that undergo especially pyrolitic reactions. The device comprises a support plate, heated from one side, on which at least one compensation plate rests while forming a horizontal gap. In order to be better able to influence the surface temperature, the gap height of the horizontal gap can be varied or is locally variable in order to influence the local surface temperature of the compensation plate.

Abstract: The invention relates to an apparatus and a method for depositing one or more thin layers of polymeric para-xylylene. Said apparatus comprises a heated evaporator (1) used for evaporating a solid or liquid starting material. A supply pipe (11) for a carrier gas extends into said evaporator (1). The carrier gas conducts the evaporated starting material, in particular the evaporated polymer, into a pyrolysis chamber (2) which is located downstream of the evaporator (1) and in which the starting material is decomposed. The apparatus further comprises a deposition chamber (8) which is located downstream of the decomposition chamber (2) and encompasses a gas inlet (3) through which the decomposed product conducted by the carrier gas is admitted, a susceptor (4) which has a supporting surface (4?) opposite the gas inlet (3) in order to support a substrate (7) that is to be coated with the polymerized decomposed product, and a gas outlet (5).

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body comprising a gas-leak surface facing the substrate holder and provided with a plurality of essentially evenly distributed outlets for process gases to be introduced into the process chamber. In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors arranged to the rear of the outlets and respectively aligned with an associated outlet.

Abstract: The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7?) of a substrate (7) which lies on a supporting surface (4?) of a susceptor, said supporting surface (4?) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4?) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4?) is lower than the temperature (TG) of the gas inlet element (3).

Abstract: A chemical vapor deposition (CVD) apparatus is configured for thermal gradient enhanced CVD operation by the inclusion of multiple heaters, positioned so as to provide a desired thermal gradient profile across a vertical dimension of a substrate or other work piece within the chamber. So configured, the chamber may also be used for controlled growth of thin films via diffusion through intermediate films, either top down or bottom parallel to the direction of the thermal gradient.

Abstract: Nano-technology is an emerging and intensely competitive field. There are a number of companies that work mainly in the development of various Nano-technology areas. One area that has not received too much emphasis is that of specialized equipment for Nano-technology. Nanoinstruments is a company working to rectify this deficiency in the field of nano-material deposition, especially in Carbon Nanotube and Nanowire growth. A number of innovations disclosed include the use of a low thermal mass heating unit that allows fast changes in temperature of the growth sample while providing sufficient thermal stability, uniformity and electrical isolation, a novel shower head design for providing uniform gas flow while eliminating thermal and plasma decomposition of feed stock at the nozzle, a pulsed voltage waveform that eliminates charging of substrate on which the growth has to take place, and the use of a conductive grid over insulating substrates to achieve uniform plasma over the growth surface.

Abstract: A device for loading at least one substrate into a process chamber of a coating unit and unloading the at least one substrate therefrom by means of a gripper of a handling machine. The device includes a loading plate which can be gripped by the gripper and embodies a storage place for each at least one substrate, the storage place being formed by an edge of an opening that is assigned to each substrate. The device also includes a substrate holder that is provided with a pedestal-type substrate support which is adapted to the loading plate and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

Abstract: The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder.

Abstract: The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.

Abstract: A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The process includes the step of varying the height of the process chamber, which is defined by the distance between the substrate bearing surface and the gas exit surface, before the beginning of the deposition process and/or during the deposition process.

Abstract: What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.

Abstract: The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber. Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber by means of non-continuous injection of a liquid starting material or a starting material dissolved in a liquid using a respective injector unit. Said vapor is guided to the process chamber by means of a carrier gas. It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit, determining the time response of the flow of material through each injector unit. The pressure in the process chamber is less than 100 mbars, the process chamber is tempered and several series of layers are deposited on the substrate during one process step.

Abstract: A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.

Abstract: The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated susceptor. The first process gas flows through a central line with a central outlet opening and the second process gas flows through a line which is peripheral thereto and which has a peripheral outlet opening that is formed by a gas-permeable gas outlet ring. Said gas outlet ring surrounds a ring-shaped pre-chamber.

Abstract: The invention relates to an arrangement comprising a support body with a substrate holder, mounted thereon on a gas bearing with rotating drive. The gas bearing and the rotating drive are formed by gas flowing in through nozzles arranged in the separating gaps between support body and substrate. The support body and the substrate holder are embodied as rings, whereby the rings lie on each other in a self-centering manner and the one ring comprises a ring bead extending into a ring recess on the other ring.

Abstract: A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

Abstract: The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.

Abstract: What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.

Abstract: This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing silicon. According to said method, a III-V layer, especially a buffer layer, is deposited on the substrate or on a III-V germination layer, in a process chamber of a reactor containing gaseous starting materials. In order to reduce the defect density of the overgrowth, a masking layer consisting of essentially amorphous material is deposited directly on the III-V germination layer or directly on the substrate, said masking layer partially covering of approximately partially covering the germination layer. The masking layer can be a quasi-monolayer and can consist of various materials.