Abstract: The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Abstract: A CVD reactor comprising: a reactor casing with a casing cover, a heated susceptor for one wafer or several wafers, which is disposed in the reactor casing, a fluid inlet unit including a plurality of openings facing said wafer or wafers through which the CVD media, which is moderately heated, enter the reactor, and a fluid outlet disposed on the periphery of the reactor casing, through which the introduced media is discharged; wherein the fluid outlet has roughly the shape of a disk with a plurality of outlet openings for the discharge of CVD media, and is disposed between the susceptor and the reactor cover in such a way that the fluid outlet is heated by the susceptor by radiation and hence adjusts itself to a temperature between the temperature of the susceptor and the reactor cover through which the CVD media enter in a moderately heated state.