Abstract: A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Abstract: Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond malarial having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

Abstract: A system and method for diamond based multilayer antireflective coating for optical windows are provided. An antireflective coatings for optical windows may include an optical grade silicon substrate, a first polycrystalline diamond film on the silicon substrate, a germanium film on the first polycrystalline diamond film, a fused silica film on the germanium film; and a second polycrystalline diamond film on the fused silica film. A method of fabricating a diamond based multilayer antireflective coating may include the steps of cleaning and seeding an optical substrate, forming a first diamond layer on the optical substrate, forming a germanium layer on the first diamond layer, forming a fused silica layer on the germanium layer, cleaning and seeding the germanium layer, and forming a second diamond layer on the germanium layer.

Abstract: A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Abstract: Disclosed herein is system and method for protective diamond coatings. The method may include the steps of cleaning and seeding a substrate, depositing a crystalline diamond layer on the substrate, etching the substrate; and attaching the substrate to protected matter. The crystalline diamond layer may reflect at least 28 percent of electromagnetic energy in a beam having a bandwidth of 800 nanometer to 1 micrometer.

Abstract: Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, a transparent substrate layer; a titanium dioxide transparent layer, the transparent layer having an index of refraction of 2.35 or greater; and a polycrystalline diamond layer, wherein the transparent layer is between the substrate layer and the polycrystalline diamond layer.

Abstract: A system and method for diamond based multilayer antireflective coating for optical windows are provided. An antireflective coatings for optical windows may include an optical grade silicon substrate, a first polycrystalline diamond film on the silicon substrate, a germanium film on the first polycrystalline diamond film, a fused silica film on the germanium film; and a second polycrystalline diamond film on the fused silica film. A method of fabricating a diamond based multilayer antireflective coating may include the steps of cleaning and seeding an optical substrate, forming a first diamond layer on the optical substrate, forming a germanium layer on the first diamond layer, forming a fused silica layer on the germanium layer, cleaning and seeding the germanium layer, and forming a second diamond layer on the germanium layer.

Abstract: Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Abstract: Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, and a nanocrystalline diamond film on the silicon substrate, the diamond film deposited using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added. Further disclosed is a method of fabricating transparent glass that includes the steps of seeding an optical grade silicon substrate and forming a nanocrystalline diamond film on the silicon substrate using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added.

Abstract: A broad band mirror system and method, wherein the system includes a mechanical substrate layer, a reflective metal layer on the mechanical substrate level, and a diamond layer, and the method includes the steps of selecting a sacrificial substrate layer, depositing a diamond layer on the substrate layer, smoothing a first surface of the diamond layer, depositing a reflective metal layer on the diamond layer, bonding a mechanical substrate to the diamond layer, removing the sacrificial substrate level, and smoothing a second diamond surface.

Abstract: Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K, and wherein the n-type donor atoms are introduced to the lattice through ion tracks.

Abstract: A system and method for diamond based multilayer antireflective coating for optical windows are provided. An antireflective coatings for optical windows may include an optical grade silicon substrate, a first polycrystalline diamond film on the silicon substrate, a germanium film on the first polycrystalline diamond film, a fused silica film on the germanium film; and a second polycrystalline diamond film on the fused silica film. A method of fabricating a diamond based multilayer antireflective coating may include the steps of cleaning and seeding an optical substrate, forming a first diamond layer on the optical substrate, forming a germanium layer on the first diamond layer, forming a fused silica layer on the germanium layer, cleaning and seeding the germanium layer, and forming a second diamond layer on the germanium layer.

Abstract: A system and method for diamond based multilayer antireflective coating for optical windows are provided. An antireflective coatings for optical windows may include an optical grade silicon substrate, a first polycrystalline diamond film on the silicon substrate, a germanium film on the first polycrystalline diamond film, a fused silica film on the germanium film; and a second polycrystalline diamond film on the fused silica film. A method of fabricating a diamond based multilayer antireflective coating may include the steps of cleaning and seeding an optical substrate, forming a first diamond layer on the optical substrate, forming a germanium layer on the first diamond layer, forming a fused silica layer on the germanium layer, cleaning and seeding the germanium layer, and forming a second diamond layer on the germanium layer.

Abstract: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.