Abstract: An apparatus and method for drying substrates. The inventive apparatus comprises: an object support member for supporting at least one substrate in a process tank having one or more support sections comprising capillary material. The inventive method is a method of removing liquid from a wet substrate in a process tank comprising contacting the wet substrate with capillary material. In another aspect, the invention is a method of drying at least one substrate having a surface in a process tank comprising: submerging the substrate in a liquid having a liquid level; supporting the submerged substrates in the process tank; supplying a drying vapor above the liquid level; lowering the liquid level or raising the substrate so that the liquid level is below the substrate, thereby removing a major portion of liquid from the substrate surface; and removing remaining liquid from the substrate surface with capillary material.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: A process tank for processing a plurality of wafers having a diameter, the process tank comprising: two substantially vertical side walls being a first distance apart; wherein the first distance is substantially equal to the diameter of the wafer; two upwardly angled walls positioned between the side walls; a first transducer array coupled to a first of the upwardly angled walls, the first transducer array extending a length less than the diameter of the wafer; and a second transducer array coupled to a second of the upwardly angled walls, the second transducer array extending a length less than the diameter of the wafer. It is preferred that the process tank further comprise a fluid inlet positioned between the upwardly angled walls.

Abstract: A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.

Abstract: A process tank for stripping photoresist from semiconductor wafers. In one aspect the invention is a process tank having a process chamber, means to support at least one wafer in the processing chamber, means for supplying a process liquid to the chamber, a lid adapted to close the chamber, a liquid level sensor adapted to stop the supply of process liquid to the chamber when the process liquid fills the chamber to a predetermined level below a wafer supported in the processing chamber, an acoustical energy source adapted to supply acoustical energy to process liquid located in the chamber so as to create a mist of the process liquid in the processing chamber, and means to supply a process gas to the chamber, the process gas supply means being located above the predetermined level and adapted to supply process gas to the chamber under pressure during mist creation.