Abstract: A system and method for improving the efficiency and effectiveness of the transmission of acoustical energy to process fluids during substrate processing, such as cleaning or photoresist stripping. The invention utilizes a layered stack of materials to transmit acoustical energy from a source of acoustical energy to the process fluid. The material of which each layer is constructed is chosen so as to reduce the differences in acoustical impedance between consecutive layers of the stack, providing a more gradual transition, in terms of acoustical impedance, when acoustical energy is being transmitted from the source to the process fluid. In one aspect, the invention is a system comprising: a process chamber for receiving a process fluid; an acoustical energy source; and an acoustical stack having a first transmission layer and a second transmission layer that forms an acoustical energy pathway from the acoustical energy source to the process fluid in the process chamber.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: An apparatus and method for drying substrates. The inventive apparatus comprises: an object support member for supporting at least one substrate in a process tank having one or more support sections comprising capillary material. The inventive method is a method of removing liquid from a wet substrate in a process tank comprising contacting the wet substrate with capillary material. In another aspect, the invention is a method of drying at least one substrate having a surface in a process tank comprising: submerging the substrate in a liquid having a liquid level; supporting the submerged substrates in the process tank; supplying a drying vapor above the liquid level; lowering the liquid level or raising the substrate so that the liquid level is below the substrate, thereby removing a major portion of liquid from the substrate surface; and removing remaining liquid from the substrate surface with capillary material.

Abstract: An apparatus for transporting semiconductor wafers between processing steps that can also be used to support the wafers during various processing steps. The apparatus minimizes the obstruction of fluid flow in the process tank, reduces the amount of devices that will fail due to edge exclusion, and reduces processing times. In one embodiment, the apparatus is a wafer carrier comprising a wire frame having three load supporting members, the load supporting members having a plurality of wafer engaging elements adapted to support a plurality of wafers.

Abstract: A method of removing photoresist from semiconductor wafers through the use of a sparger plate. According to the inventive method, at least one semiconductor wafer is positioned in a process tank above the sparger plate. A mixture of ozone and deionized water is introduced into the process tank at a position below the sparger plate. The mixture of ozone and deionized water is then introduced across the wafer via the sparger plate at an increased flow velocity while the wafer is submerged in the mixture of deionized water and ozone.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: A process tank for processing a plurality of wafers having a diameter, the process tank comprising: two substantially vertical side walls being a first distance apart; wherein the first distance is substantially equal to the diameter of the wafer; two upwardly angled walls positioned between the side walls; a first transducer array coupled to a first of the upwardly angled walls, the first transducer array extending a length less than the diameter of the wafer; and a second transducer array coupled to a second of the upwardly angled walls, the second transducer array extending a length less than the diameter of the wafer. It is preferred that the process tank further comprise a fluid inlet positioned between the upwardly angled walls.

Abstract: A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.

Abstract: Silicon wafers are treated with chemicals during the manufacture of integrated circuits according to the method of the invnention in the apparatus of the invention which comprises a process tank for cleaning, rinsing, and/or drying silicon wafers; a first chemical supply vessel suitable for being pressurized, fluidly coupled to the process tank; a chemical flow sensor for electronically monitoring the flow rate of chemical from the first hemical supply vessel; a first chemical flow metering valve for electronically controlling the flow rate of chemical from the first chemical supply vessel; a supply of hot DI water fluidly coupled to the process tank; a hot water metering valve for electronically controlling the flow rate of hot DI water from the supply of the hot DI water; a supply of cold DI water fluidly coupled to the process tank; a cold water metering means for electronically controlling the flow rate of cold DI water from the supply of cold DI water; water flow sensor means for electronically monitorin

Abstract: A system and method for ensuring constant concentration ratios in multi-fluid mixtures used in wafer processing steps. In one aspect the invention is a method for supplying a multi-fluid mixture to a process tank comprising: transporting a first fluid through a first supply line having means to control mass flow rate of the first fluid; transporting a second fluid through a second supply line having means to control mass flow rate of the second fluid; converging the first and second fluids to form a multi-fluid mixture; repetitively measuring the concentration levels of the first and second fluids in the multi-fluid mixture with a sensor; and upon the sensor detecting undesirable concentration levels of either the first or second fluid in the multi-fluid mixture, automatically adjusting the mass flow rate of at least one of the first and second fluids to achieve desired concentration levels.

Abstract: A system and method for reducing the amount of contaminants that come into contact with wafer substrates during the production of integrated circuit devices. The system allows for uniform overflow of processing liquid from a process tank while preventing contaminants from reentering the process tank and contacting the wafers. The system in one aspect comprises an inner weir with a top surface, and overflow wall with at least one recess having a bottom, and a structure, the structure connecting the overflow wall and the inner weir to form a drainage basin with at least one drain hole; wherein the top surface of the inner weir is below the bottom of the at least one recess.

Abstract: Drying semiconductor wafers or substrates by introducing an polar organic compound in liquid form into or onto means for enhancing evaporation within a process chamber and allowing the liquid to evaporate and form a drying vapor within the process chamber.

Abstract: A process and system for removing photoresist from semiconductor wafers comprises applying pressure in excess of one atmosphere to ozone, mixing the ozone with ambient temperature or higher deionized water via a sparger plate, and exposing the semiconductor wafers to the mixture of ozone and deionized water. The system is comprised of a tank capable of holding the semiconductor wafers, a sparger plate within the tank, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank. No chiller is included in the system as required by the prior art.

Abstract: A method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; supplying a process gas under pressure to a remaining volume of the process tank; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. Preferably, the process liquid is ozonated deionized water and the process gas is ozone.

Abstract: A process tank for stripping photoresist from semiconductor wafers. In one aspect the invention is a process tank having a process chamber, means to support at least one wafer in the processing chamber, means for supplying a process liquid to the chamber, a lid adapted to close the chamber, a liquid level sensor adapted to stop the supply of process liquid to the chamber when the process liquid fills the chamber to a predetermined level below a wafer supported in the processing chamber, an acoustical energy source adapted to supply acoustical energy to process liquid located in the chamber so as to create a mist of the process liquid in the processing chamber, and means to supply a process gas to the chamber, the process gas supply means being located above the predetermined level and adapted to supply process gas to the chamber under pressure during mist creation.