Abstract: A method of making vapor deposited thin films by rotating a substrate in the presence of an obliquely incident vapor flux. The substrate is rotated about an axis normal to the surface of the substrate while depositing a vapor flux, and then paused while depositing vapor flux to cause columns of a thin film to grow obliquely. The resulting thin film exhibits a porosity that is not dependent on the column angle of the resulting thin films.
Type:
Grant
Filed:
July 30, 1997
Date of Patent:
March 27, 2001
Assignees:
The Governors of the University of Alberta, Alberta Microelectronic Corporation
Abstract: A method of making vapor deposited thin films by rotating a substrate in the presence of an obliquely incident vapor flux. The substrate may be rotated about an axis normal to the surface of the substrate and/or parallel to the surface of the substrate by two motors mounted with their axes orthogonal to each other. Angle of incidence, measured from the normal to the surface of the substrate, exceeds 80.degree.. Feedback from a deposition rate monitor allows control of rotation speed of both motors to produce a growth with a defined pattern.
Type:
Grant
Filed:
July 23, 1996
Date of Patent:
February 2, 1999
Assignees:
The Governors of the University of Alberta, Alberta Microelectronic Corporation
Inventors:
Kevin John Robbie, Michael Julian Brett