Abstract: In an optical module comprising an arrayed waveguide grating multiplexer-demultiplexer component having at least one inlet waveguide and at least one outlet waveguide, the module is integrated and comprises at least one inlet optical fiber and at least one outlet optical fiber, said inlet waveguide presenting an optical coupling interface with the inlet optical fiber and said outlet waveguide presenting an optical coupling interface with the outlet optical fiber, and a thin film filter is inserted directly at the optical coupling interface between the inlet and/or outlet waveguide(s) of the multiplexer-demultiplexer component and the inlet/outlet optical fiber(s) of the module.

Abstract: The invention is related to an optical device comprising, in an housing (1) with a defined gas atmosphere:

Abstract: The invention concerns a semiconductor optical amplifier. The optical guide structure of this amplifier comprises a rectangular cross-section active stripe (12). Its material is homogeneous and it is subjected to a tensile strain sufficient to render the amplifier insensitive to the polarisation of the light to be amplified.The invention finds an application in optical telecommunications.

Abstract: In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.

Abstract: The demultiplexer has two couplers connected together by a grating of waveguides that are all of different lengths. To make a grating component of low order and that occupies little space, each waveguide has three adjacent segments having radii of curvature that are respectively positive, negative, and positive. The demultiplexer is particularly applicable to duplex optical communications.

Abstract: A Bragg grating is produced in a semiconductor component by wet etching through a resin mask developed after holographic exposure. This causes the regions of the grating at the boundary of other parts of the component to be etched more deeply. To compensate this, the method includes further irradiation through a second mask disposed at a distance from the part of the resin mask that defines the location of the grating. Applications include opto-electronic components.

Abstract: Prior to using etching to form a plateau that is to constitute a laser ridge and that is to be provided with a cover constituting a top electrode, the surface of the cover is initially protected with a dielectric mask and the flanks of the cover are then protected with a dielectric coating. The dielectric coating is initially deposited uniformly over the surface and the flanks. It is then etched by directional means so that it remains on the flanks only. The invention is particularly applicable to making an optical amplifier.

Abstract: In a laser device, notably for optical pumping, the wafer includes an expansion segment adjacent the exit to prevent degradation of the exit facet of the semiconductor wafer that constitutes the amplifying part of the laser. The other facet is reflective and a Bragg grating is formed in a coupling fiber disposed near the exit facet. Applications include optical pumping of erbium-doped fiber amplifiers.