Abstract: A method and a system for developing semiconductor device fabrication processes are provided. The developments of vertical and lateral semiconductor device fabrication processes can be integrated in the system. First, according to a target semiconductor device and a specification thereof, an initial target model and a general database are captured. The initial target model and the general database are compared to obtain a corresponding relationship. According to the corresponding relationship, multiple fixed fabrication parameters of the general database are applied to the initial target model, such that at least one adjustable parameter is defined. Thereafter, the parameter is set according to a setting instruction received through a user interface to produce a target model to be simulated. A simulation test is performed with the target model, and the adjustable parameter is modified until the simulation result of the target model satisfies a standard result.