Abstract: A distributed feedback (DFB) laser includes a planar substrate; a laser section; and a mirror section optically coupled to said laser section. The laser section includes a front facet, an active layer substantially parallel to the planar substrate but not coplanar with the planar substrate and configured to emit light through the front facet, and a first Bragg grating arranged in a planar layer substantially parallel to the active layer but not coplanar with the active layer and on a side of the active layer opposite to the planar substrate. The mirror section is optically coupled to the laser section, and includes a second Bragg grating configured to reflect light towards the front facet. The second Bragg grating is arranged in a planar layer that is coplanar with the active layer.

Abstract: The present disclosure relates to a metal-semiconductor-metal photodetector configured to detect incident light in a given range of wavelengths comprising: an absorbing semiconductor layer (325); a first semiconductor layer (321) made of a first semiconductor material and in electrical contact with said absorbing semiconductor layer; a first metal electrode (340) in electrical contact with the first semiconductor layer (321), configured to produce with the first semiconductor layer (321), an electron Schottky junction, wherein the first semiconductor layer is arranged between said first metal electrode and the absorbing semiconductor layer; a second semiconductor layer (322) made of a second semiconductor material different from the first semiconductor material, in electrical contact with said absorbing semiconductor layer; a second metal electrode (330) in electrical contact with the second semiconductor layer configured to produce with the second semiconductor layer, a hole Schottky junction, wherein the se

Abstract: According to a first aspect, the present disclosure relates to a semiconductor sub-assembly comprising a semiconductor device comprising: a semi-insulating substrate (201); a first section (210) configured to emit light; at least a second section (220) configured to modulate light emitted by said first section (210); wherein said first section (210) and said at least second section (220) are monolithically integrated on said semi-insulating substrate (201) and have a common optical waveguide (205?); said first section (210) forms a first vertical PIN junction with a first electrode (212) and a second electrode (214) on said semi-insulating substrate (201); said second section (220) forms a second vertical PIN junction with a first electrode (222) and a second electrode (224) on said semi-insulating substrate (201); an electric resistance between said first electrode (212) of said first section (210) and said first electrode (222) of said second section (220) is superior to about 50 ohms; and an electric resis

Abstract: An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly.

Abstract: An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly.