Patents Assigned to alpha microelectronics GmbH
  • Method for the construction of vertical power transistors with differing powers by combination of pre-defined part pieces
    Patent number: 8793116
    Abstract: A method for designing a first vertical MOS power transistor having a specified design power level. The method comprises the steps of composing a layout of the vertical MOS power transistor as a combination of at least partly differing layout part pieces, each of the part pieces having known design data, the part pieces including at least one first layout part piece comprising a given number of single transistor cells, and adjusting the specified design power level of the first vertical MOS power transistor by using the known design data of the part pieces and based on the layout combination of the part pieces.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: July 29, 2014
    Assignees: X-Fab Semiconductor Foundries AG, Alpha microelectronics GmbH
    Inventors: Ralf Lerner, Wolfgang Miesch
  • Method for the construction of vertical power transistors with differing powers by combination of pre-defined part pieces
    Patent number: 8190415
    Abstract: A method for designing a first vertical MOS power transistor having a specified design power level. The method comprises the steps of composing a layout of the vertical MOS power transistor as a combination of at least partly differing layout part pieces, each of the part pieces having known design data, the part pieces including at least one first layout part piece comprising a given number of single transistor cells, and adjusting the specified design power level of the first vertical MOS power transistor by using the known design data of the part pieces and based on the layout combination of the part pieces.
    Type: Grant
    Filed: October 5, 2005
    Date of Patent: May 29, 2012
    Assignees: X-FAB Semiconductor Foundries AG, alpha microelectronics GmbH
    Inventors: Ralf Lerner, Wolfgang Miesch
  • Method for the Construction of Vertical Power Transistors with Differing Powers by Combination of Pre-Defined Part Pieces
    Publication number: 20080243443
    Abstract: A method for designing a first vertical MOS power transistor having a specified design power level. The method comprises the steps of composing a layout of the vertical MOS power transistor as a combination of at least partly differing layout part pieces, each of the part pieces having known design data, the part pieces including at least one first layout part piece comprising a given number of single transistor cells, and adjusting the specified design power level of the first vertical MOS power transistor by using the known design data of the part pieces and based on the layout combination of the part pieces.
    Type: Application
    Filed: October 5, 2005
    Publication date: October 2, 2008
    Applicants: X-FAB SEMICONDUCTOR FOUNDRIES AG, ALPHA MICROELECTRONICS GMBH
    Inventors: Ralf Lerner, Wolfgang Miesch