Patents Assigned to Alpha Power Solutions Limited
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Patent number: 11869762Abstract: A semiconductor device includes a device cell including a gate component configured to receive a gate control signal and a temperature sensing component adjacent to the device cell. Each of the temperature sensing component and the gate component includes polycrystalline silicon.Type: GrantFiled: October 13, 2020Date of Patent: January 9, 2024Assignee: Alpha Power Solutions LimitedInventors: Wai Tien Chan, Qian Sun, Ho Nam Lee
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Patent number: 11476370Abstract: One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face.Type: GrantFiled: August 6, 2020Date of Patent: October 18, 2022Assignee: Alpha Power Solutions LimitedInventors: Wing Kit Cheung, Wai Tien Chan, Wing Chong Tony Chau, Ho Nam Lee, Qian Sun
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Publication number: 20220085217Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: ApplicationFiled: November 29, 2021Publication date: March 17, 2022Applicant: Alpha Power Solutions LimitedInventors: Wing Chong Tony CHAU, Wing Kit CHEUNG, Wai Tien CHAN
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Patent number: 10818495Abstract: An exemplary method of making a semiconductor device includes providing a semiconductor layer of a first conductivity type, providing a first hard mask on a surface of the semiconductor layer, patterning the first hard mask to obtain a patterned first hard mask to obtain an exposed surface of the semiconductor layer, forming a body region in the semiconductor layer by using the patterned first hard mask as mask, the body region being of a second conductivity type different from the first conductivity type, providing a second hard mask on the patterned first hard mask and the exposed surface of the semiconductor layer, patterning the second hard mask to obtain a patterned second hard mask, and forming a contact region and a sinker region by using the patterned first hard mask and the patterned second hard mask as mask.Type: GrantFiled: June 11, 2019Date of Patent: October 27, 2020Assignee: Alpha Power Solutions LimitedInventors: Wai Tien Chan, Wing Chong Tony Chau, Wing Kit Cheung
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Publication number: 20200152806Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: ApplicationFiled: January 10, 2020Publication date: May 14, 2020Applicant: Alpha Power Solutions LimitedInventors: Wing Chong Tony CHAU, Wing Kit CHEUNG, Wai Tien CHAN
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Patent number: 10586876Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: GrantFiled: September 14, 2017Date of Patent: March 10, 2020Assignee: Alpha Power Solutions LimitedInventors: Wing Chong Tony Chau, Wing Kit Cheung, Wai Tien Chan
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Publication number: 20200020533Abstract: An exemplary method of making a semiconductor device includes providing a semiconductor layer of a first conductivity type, providing a first hard mask on a surface of the semiconductor layer, patterning the first hard mask to obtain a patterned first hard mask to obtain an exposed surface of the semiconductor layer, forming a body region in the semiconductor layer by using the patterned first hard mask as mask, the body region being of a second conductivity type different from the first conductivity type, providing a second hard mask on the patterned first hard mask and the exposed surface of the semiconductor layer, patterning the second hard mask to obtain a patterned second hard mask, and forming a contact region and a sinker region by using the patterned first hard mask and the patterned second hard mask as mask.Type: ApplicationFiled: June 11, 2019Publication date: January 16, 2020Applicant: Alpha Power Solutions LimitedInventors: Wai Tien CHAN, Wing Chong Tony CHAU, Wing Kit CHEUNG