Patents Assigned to Alphabet Energy, Inc.
  • Publication number: 20120247527
    Abstract: A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10?13 ?-m2 to 10?7 ?-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10?2 K/W to 1010 K/W.
    Type: Application
    Filed: February 1, 2012
    Publication date: October 4, 2012
    Applicant: Alphabet Energy, Inc.
    Inventors: Matthew L. Scullin, Madhav A. Karri, Adam Lorimer, Sylvain Muckenhirn, Gabriel A. Matus, Justin Tynes Kardel, Barbara Wacker
  • Publication number: 20120152295
    Abstract: A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 21, 2012
    Applicant: Alphabet Energy, Inc.
    Inventors: Gabriel A. Matus, Mingqiang Yi, Matthew L. Scullin, Justin Tynes Kardel
  • Publication number: 20110114146
    Abstract: A uniwafer device for thermoelectric applications includes one or more first thermoelectric elements and one or more second thermoelectric elements comprising respectively a first and second patterned portion of a substrate material. Each first/second thermoelectric element is configured to be functionalized as an n-/p-type semiconductor with a thermoelectric figure of merit ZT greater than 0.2. The second patterned portion is separated from the first patterned portion by an intermediate region functionalized partially for thermal isolation and/or partially for electric interconnecting. The one or more first thermoelectric elements and the one or more second thermoelectric elements are spatially configured to allow formation of a first contact region and a second contact region respectively connecting to each of the one or more first thermoelectric elements and/or each of the one or more second thermoelectric elements to form a continuous electric circuit.
    Type: Application
    Filed: November 10, 2010
    Publication date: May 19, 2011
    Applicant: Alphabet Energy, Inc.
    Inventor: Matthew L. Scullin