Abstract: Disclosed is a method for cutting dielectric or semiconducting material with a laser. The method includes the following steps: emission of a laser beam including at least one burst of N femtoseconds laser pulses; spatial separation of the laser beam into a first split beam having a first energy, and respectively, a second split beam having a second energy; spatial concentration of energy of the first split beam in a first zone of the material, respectively, of the second split beam in a second zone of the material, the first zone and the second zone being separate and staggered by a distance dx; and adjustment of the distance between the first zone and the second zone in such a way as to initiate a straight micro-fracture oriented between the first zone and the second zone.

Abstract: A laser turning system (1) for producing a component (60) having a length less than 250 mm and/or a diameter less than 10 mm, the system including a rotary spindle (3) for moving a bar of material and a galvanometric scanner (12) capable of emitting a femtosecond laser beam scanning a generating profile of the component to be machined in the bar of material.

Abstract: An optical source having a fiber emitting controlled single-transverse mode radiation at a wavelength of less than 1030 nm, includes at least one laser diode suitable for emitting a pumping wave; and a section of sheathed amplifying optical fiber having two ends, the amplifying optical fiber comprising a core and a pumping sheath, the fiber being doped with a rare earth dopant; a device for coupling the pumping source in the sheath of the doped fiber, characterized in that the core of the doped fiber includes a cylindrical portion doped with a rare earth element selected among ytterbium, neodymium, and thulium, in order to obtain a refractive index of the core that is higher than the refractive index of the sheath; the excitation wavelength of the laser diode is between 750 nm and 960 nm; the diameter of the sheath is greater than 50 microns, and the surface ratio of the doped core to the pumping sheath is between 8 and 50.

Abstract: The present invention relates to a terahertz imaging device comprising a terahertz source, a converter for converting terahertz radiation into thermal radiation, and a thermal detector. The converter has at least one zone sensitive to terahertz radiation, designed to absorb the terahertz radiation and vconvert the absorbed radiation into heat. This sensitive zone is close to a reference zone, of known absorption capacity, and the thermal detector is designed to measure the heat generated by the sensitive zone relative to the heat generated by the reference zone.

Abstract: An optical source having a fiber emitting controlled single-transverse mode radiation at a wavelength of less than 1030 nm, includes at least one laser diode suitable for emitting a pumping wave; and a section of sheathed amplifying optical fiber having two ends, the amplifying optical fiber comprising a core and a pumping sheath, the fiber being doped with a rare earth dopant; a device for coupling the pumping source in the sheath of the doped fiber, characterized in that the core of the doped fiber includes a cylindrical portion doped with a rare earth element selected among ytterbium, neodymium, and thulium, in order to obtain a refractive index of the core that is higher than the refractive index of the sheath; the excitation wavelength of the laser diode is between 750 nm and 960 nm; the diameter of the sheath is greater than 50 microns, and the surface ratio of the doped core to the pumping sheath is between 8 and 50.

Abstract: The present invention relates to a terahertz imaging device comprising a terahertz source, a converter for converting terahertz radiation into thermal radiation, and a thermal detector. The converter has at least one zone sensitive to terahertz radiation, designed to absorb the terahertz radiation and vconvert the absorbed radiation into heat. This sensitive zone is close to a reference zone, of known absorption capacity, and the thermal detector is designed to measure the heat generated by the sensitive zone relative to the heat generated by the reference zone.