Abstract: A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).

Abstract: A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).

Abstract: A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).

Abstract: In accordance with an embodiment of the invention, a semiconductor memory includes a number of data ports each having a predetermined number of data bits. The memory further has a number of memory macros each including at least one memory array having rows and columns of memory cells. Each memory macro further includes a plurality of internal data connection points directly connected to external terminals to transfer data to or from the at least one memory array. The internal data connection points correspond in number to the number of the data ports, and the internal data connection points in the memory macros together form the plurality of data ports.

Abstract: A system and method for efficiently interconnecting a plurality of ICs, thereby improving the electrical performance of the overall system while reducing contact degradation due to stress that results from differences in the coefficients of thermal expansion of the various components during thermal cycling

Abstract: A method and a system for wafer level burn-in testing of a circuit featuring a flip-jumper to permit selectively connecting signals to the interconnect sites on the wafer that are in constant electrical communication with the circuit.

Abstract: A module and method for interconnecting integrated circuits. The module includes an insulative body that features conductive traces having differing resistivities associated therewith. To that end, the insulative body has, disposed therein, a conductive bond pad and a plurality of spaced apart conductive traces, one of which is in electrical communication with the bond pad, with each of the plurality of conductive traces are formed from a material having a resistivity associated therewith. The resistivity of the material from which one of the plurality of conductive traces is formed being greater than the resistivity of the material from which the remaining conductive traces are formed and defines a decoupling capacitor therebetween.

Abstract: A system and method for efficiently interconnecting a plurality of ICs, thereby improving the electrical performance of the overall system while reducing contact degradation due to stress that results from differences in the coefficients of thermal expansion of the various components during thermal cycling.

Abstract: A system and method for efficiently interconnecting a plurality of ICs, thereby improving the electrical performance of the overall system. In one embodiment of the system of the present invention, a plurality of carriers corresponds to a plurality of ICs, and a board has a plurality of board regions for receiving the plurality of ICs and are arranged so as to be attached to a backplane forming a vertical stack of boards.

Abstract: A system and method for efficiently interconnecting a plurality of ICs, thereby improving the electrical performance of the overall system. In one embodiment of the system of the present invention, a plurality of carriers corresponds to a plurality of ICs, and a board has a plurality of board regions for receiving the plurality of ICs. In one embodiment of the method of the present invention, a carrier is provided for each IC in a complex IC. A board having openings is provided, and the ICs are fitted into the board openings with the carriers mounted thereto.