Patents Assigned to Alpsentek GmbH
  • Patent number: 12348679
    Abstract: A delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect a changed level; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The sensor circuit is configured to change an analogue function of its read-out characteristics to generate a respective changed VSIG.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: July 1, 2025
    Assignees: Beijing RuisiZhixin Technology Co., Ltd., Alpsentek GmbH
    Inventors: Yingyun Zha, Roger Mark Bostock, Jian Deng, Yu Zou
  • Patent number: 12114091
    Abstract: A delta image sensor comprising a plurality of acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes at least one sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor; at least one single slope analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal, wherein the A/D circuit (12) is configured to use one of a plurality of ramps for the conversion; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output, in response to the changed level.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: October 8, 2024
    Assignees: Beijing Ruisizhixin Technology Co., Ltd, AlpsenTek GmbH
    Inventors: Yingyun Zha, Roger Mark Bostock, Jian Deng, Yu Zou
  • Patent number: 12114090
    Abstract: An image sensor comprises an arrangement of pixels, the pixels including an acquisition circuit each, the acquisition circuit including: a sensor circuit configured to generate a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel; a storage circuit configured to store during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG); and a comparator circuit configured to generate after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE). A method of operating an image sensor comprises steps of generating a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel, storing during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG) and generating after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE).
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: October 8, 2024
    Assignees: BEIJING RUISIZHIXIN TECHNOLOGY CO., LTD., AlpsenTek, GmbH.
    Inventor: Liming Chen
  • Patent number: 11962926
    Abstract: The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: April 16, 2024
    Assignee: Alpsentek GmbH
    Inventors: Yingyun Zha, Jian Deng, Roger Mark Bostock