Abstract: The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.