Abstract: A method of forming a solar cell device that includes forming a porous layer in a monocrystalline donor substrate and forming an epitaxial semiconductor layer on the porous layer. A solar cell structure is formed on the epitaxial semiconductor layer. A carrier substrate is bonded to the solar cell structure through a bonding layer. The monocrystalline donor substrate is removed by cleaving the porous layer. A grid of metal contacts is formed on the epitaxial semiconductor layer. The exposed portions of the epitaxial semiconductor layer are removed. The exposed surface of the solar cell structure is textured. The textured surface may be passivated, in which the passivated surface can provide an anti-reflective coating.

Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.

Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.

Abstract: A device, system, and method for a thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in may demonstrate higher open circuit voltage are disclosed herein. An exemplary thin silicon solar cell structure has a p+ silicon substrate. A dielectric layer is disposed over the p+ silicon substrate. One or more trenches are defined within the dielectric layer. A thin n type silicon layer is grown on the p+ silicon substrate within the trench by epitaxial lateral overgrowth wherein a junction area of the solar cell is minimized.

Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor absorber layer. A conductive bonding layer bonds the absorber layer to a carrier substrate. A porous layer or ion implant may be used to form the donor absorber layer.

Abstract: A device, system, and method for a silicon germanium solar cell structure. An exemplary silicon germanium solar cell structure has a substrate with a graded buffer layer grown on the substrate. An absorber layer is grown on the graded buffer layer and an emitter layer is grown on the absorber layer. A first junction is provided between the emitter layer and the absorber layer. A second junction may be provided between the substrate and the graded buffer layer.