Patents Assigned to AmberWave Systems Corp.
  • Methods for forming dielectrics and metal electrodes
    Patent number: 7432139
    Abstract: A method for forming a semiconductor structure, the method including forming in a processing chamber a dielectric layer over a substrate; and subsequently forming, in the same processing chamber and without removing the substrate therefrom, an electrode layer directly over and in contact with the dielectric layer.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: October 7, 2008
    Assignee: AmberWave Systems Corp.
    Inventor: Matthew T. Currie
  • Back-biasing to populate strained layer quantum wells
    Patent number: 6680496
    Abstract: Transistors including a buried channel layer intermediate to a source and a drain and a surface layer intermediate to the buried layer and a gate are operated so as to cause current between the source and the drain to flow predominately through the buried channel layer by applying a back-bias voltage to the transistor. The back-bias voltage modulates a free charge carrier density distribution in the buried layer and in the surface layer.
    Type: Grant
    Filed: July 8, 2002
    Date of Patent: January 20, 2004
    Assignee: AmberWave Systems Corp.
    Inventors: Richard Hammond, Glyn Braithwaite