Abstract: A method is provided for fabricating a semiconductor device, the method including forming a first dielectric layer above a structure and forming an island of a sacrificial layer above the first dielectric layer. The method also includes introducing a first dopant into first portions of the structure, leaving a second portion of the structure protected by the island, and removing first portions of the island leaving a second portion of the island. The method further includes introducing a second dopant into the first portions and third portions of the structure, leaving a fourth portion of the structure protected by the second portion of the island. The method additionally includes forming a second dielectric layer adjacent the second portion of the island, removing the second portion of the island, forming a gate dielectric above the fourth portion of the structure and forming a gate conductor above the gate dielectric.
Type:
Grant
Filed:
March 30, 1999
Date of Patent:
August 15, 2000
Assignee:
AMD, Inc. (Advanced Micro Devices)
Inventors:
Mark I. Gardner, H. Jim Fulford, Derick J. Wristers